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Mitsubishi Electric Corporation
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Part No. |
MH16S72PHB-10
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OCR Text |
... / 55 ) mitsubishi electric 1/jan. /1999 preliminary spec. some contents are subject to change without notice. mit-ds-0298-0.0 description...24 nc 66 dq22 108 nc 150 dq54 25 nc 67 dq23 109 nc 151 dq55 26 vdd 68 vss 110 vdd 152 vss 27 /we0 69... |
Description |
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
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File Size |
618.47K /
55 Page |
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Vishay Intertechnology, Inc.
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Part No. |
SUR50N03-09P-T4-E3 VISHAYSILICONIX-SUR50N03-09P-T4-E3
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OCR Text |
...mber: 72181 s-32694?rev. a, 19-jan-04 www.vishay.com 1 n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) b ...24 30 0.00 0.01 0.02 0.03 0.04 0.05 0 20406080100 0 20 40 60 80 100 0 1020304050 0 500 1000 1500 200... |
Description |
21 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 TO-252, DPAK-3
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File Size |
73.96K /
5 Page |
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SIEMENS[Siemens Semiconductor Group] Infineon
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Part No. |
BFP182R Q62702-F1601
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OCR Text |
...
Semiconductor Group
1
Jan-21-1997
BFP 182R
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Sym...24
VCE = Parameter, f = 900MHz
28
IC=10mA
dB 0.9GHz
dBm 24 8V 5V
G
20 18 0.9GHz 16 ... |
Description |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) From old datasheet system
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File Size |
58.13K /
7 Page |
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ABB[The ABB Group]
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Part No. |
5SGA30J2501
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OCR Text |
...A 30J2501
Doc. No. 5SYA1213-02 Jan. 05
* Patented free-floating silicon technology * Low on-state and switching losses * Annular gate el...24 V = 0.1 Tj = 25 C
Turn-on switching
di/dtcrit Max. rate of rise of on-state current td tr to... |
Description |
Gate turn-off Thyristor
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File Size |
212.64K /
6 Page |
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it Online |
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Price and Availability
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