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Roithner LaserTechnik G...
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| Part No. |
LED36
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| OCR Text |
...es grown on inas substrates by mocvd. inassb is used in the active layer. wide band gap solid solutions inassbp with p content 50% are used for good electron confinement. led36 has a stable ouput power and a lifetime more then 80000 hour... |
| Description |
Mid-Infrared Light Emitting Diode
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| File Size |
217.26K /
2 Page |
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Roithner LaserTechnik G...
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| Part No. |
PT511-2
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| OCR Text |
...ture based photodiode on inp by mocvd method and planar diffusing technology. the sensitive area is ? 300m respectively. to-46 package with flat glass lens. absolute maximum ratings item symbol value unit reverse voltage ... |
| Description |
TO-Can PIN Photodiode
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| File Size |
65.82K /
1 Page |
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Roithner LaserTechnik G...
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| Part No. |
PT511B
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| OCR Text |
...ture based photodiode on inp by mocvd method and planar diffusing technology. the sensitive area is ? 300m respectively. to - 46 package with ball lens. absolute ma ximum ratings (t a =25c) parameter symbol value ... |
| Description |
TO-Can PIN Photodiode
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| File Size |
139.89K /
2 Page |
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it Online |
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Roithner LaserTechnik G...
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| Part No. |
QL67F6S QL67F6SA QL67F6SB
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| OCR Text |
mocvd g r o w n band gain - guided type ingaalp laser d iode with quantum well structure. t hey are emitting at typical 6 7 0 nm with rated output power of 1 0 mw cw at room temperature. the 5 . 6 mm to pack... |
| Description |
Red Laser Diode
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| File Size |
511.60K /
3 Page |
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Microsemi
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| Part No. |
LX5503ELQ
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| OCR Text |
...r transistor (hbt) ic process (mocvd). it operates at a single supply of 3.3v with +26dbm of p1db, and power gain of 21db between 4.9-5.35ghz and 16db up to 5.85ghz. for +18dbm ofdm output power (64qam, 54mbps), the pa provides a v... |
| Description |
Wireless LAN Power Amplifier
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| File Size |
275.53K /
9 Page |
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Microsemi
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| Part No. |
LX5512ELQ-TR
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| OCR Text |
...r transistor (hbt) ic process (mocvd). it operates at a single low voltage supply of 3.3v with 34 db power gain between 2.4-2.5ghz, at a low quiescent current of 50 ma. for 19dbm ofdm output power (64qam, 54mbps), the pa provides a... |
| Description |
InGaP HBT 2.4-2.5 GHz power amplifier.
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| File Size |
206.45K /
11 Page |
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it Online |
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Microsemi
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| Part No. |
LX5512ELQ
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| OCR Text |
...r transistor (hbt) ic process (mocvd). it operates at a single low voltage supply of 3.3v with 34 db power gain between 2.4-2.5ghz, at a low quiescent current of 50 ma. for 19dbm ofdm output power (64qam, 54mbps), the pa provides a... |
| Description |
Wireless LAN Power Amplifier
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| File Size |
219.68K /
10 Page |
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it Online |
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