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IRF[International Rectifier]
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Part No. |
IRHYB67134CM IRHYB63134CM
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OCR Text |
POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number Radiation Level RDS(on) IRHYB67134CM 100K Rads (Si) 0.09 IRHYB6313...Rectifier's R6 TM technology provides superior power MOSFETs for space applications. These devices h... |
Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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File Size |
177.77K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRHYB67230CM IRHYB63230CM
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OCR Text |
POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13 IRHYB6323...Rectifier's R6TM technology provides superior power MOSFETs for space applications. These devices ha... |
Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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File Size |
132.17K /
8 Page |
View
it Online |
Download Datasheet |
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International Rectifier, Corp. IRF[International Rectifier]
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Part No. |
IRFNG50
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OCR Text |
POWER MOSFET
1000 Volt, 2.0 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXF... |
Description |
POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=2.0ohm, Id=5.5A) 功率MOSFET N沟道BVdss \u003d 1000V的的Rds(on)\u003d 2.0ohm,身份证\u003d 5.5A
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File Size |
175.24K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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