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TT electronics Semelab Limited
SEME-LAB[Seme LAB]
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| Part No. |
D1213UK D1213
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| OCR Text |
...W 40V 20V 20A -65 to 150C 200C
prelim. 7/99
D1213UK
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Vol... |
| Description |
METAL GATE RF SILICON FET
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| File Size |
37.94K /
4 Page |
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it Online |
Download Datasheet
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TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
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| Part No. |
D1029UK
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| OCR Text |
...bsite: http://www.semelab.co.uk prelim.12/00
Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature
438W 70V 20V 35A -65 to 150... |
| Description |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| File Size |
63.13K /
4 Page |
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it Online |
Download Datasheet |
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SEME-LAB[Seme LAB]
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| Part No. |
D1020UK D1020
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| OCR Text |
...bsite: http://www.semelab.co.uk prelim. 11/00
Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature
389W 70V 20V 20A -65 to 15... |
| Description |
METAL GATE RF SILICON FET
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| File Size |
243.53K /
6 Page |
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it Online |
Download Datasheet |
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SEME-LAB[Seme LAB]
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| Part No. |
D1013UK
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| OCR Text |
...te: http://www.semelab.co.uk
prelim. 12/00
D1013UK
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Vo... |
| Description |
METAL GATE RF SILICON FET
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| File Size |
229.60K /
6 Page |
View
it Online |
Download Datasheet |
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SEME-LAB[Seme LAB]
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| Part No. |
D1010UK
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| OCR Text |
...bsite: http://www.semelab.co.uk prelim. 01/01
Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature
350W 70V 20V 20A -65 to 15... |
| Description |
METAL GATE RF SILICON FET
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| File Size |
49.94K /
5 Page |
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it Online |
Download Datasheet |
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TT electronics Semelab Limited
SEME-LAB[Seme LAB]
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| Part No. |
BUL62A
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| OCR Text |
...V 6A 10A 2.5A 25W -55 to +150C
prelim. 3/95
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
BUL62A
Test Conditions
Min.
500 1000 10
Typ.
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| Description |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
63.41K /
4 Page |
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it Online |
Download Datasheet |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
BUL52AFI
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| OCR Text |
...0V 6A 10A 2.5A 45W -55 to 150C
prelim. 3/97
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
BUL52AFI
Test Conditions
Min.
500 1000 10
Typ.... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
62.84K /
4 Page |
View
it Online |
Download Datasheet |
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TT electronics Semelab Limited
SEME-LAB[Seme LAB]
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| Part No. |
BFC50
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| OCR Text |
...: 341927. Fax (0455) 552612.
prelim. 8/95
LAB
DYNAMIC CHARACTERISTICS
Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate - Source C... |
| Description |
4TH GENERATION MOSFET
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| File Size |
66.23K /
5 Page |
View
it Online |
Download Datasheet |
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