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  rf ldmos integrated power ampl Datasheet PDF File

For rf ldmos integrated power ampl Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    NXP Semiconductors N.V.
Part No. BLF871S112 BLF871-15
Description A 100 W ldmos rf power transistor for broadcast transmitter applications and industrial applications.
UHF power ldmos transistor

File Size 206.41K  /  19 Page

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    NXP Semiconductors N.V.
Part No. BLF6G22S-45112
Description Product description45 W ldmos power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
power ldmos transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;

File Size 59.48K  /  10 Page

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    NXP Semiconductors N.V.
Part No. BLF578XR
Description Product descriptionA 1200 W ldmos power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
power ldmos transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;

File Size 67.42K  /  8 Page

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    Motorola
Part No. MHVIC910HR2
Description MHVIC910HR2 960 MHz, 10 W, 26 V GSM Cellular rf ldmos integrated Circuit

File Size 330.51K  /  8 Page

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    飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
Part No. MW4IC915MBR1 MW4IC915GMBR1 MW4IC915
Description MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V rf ldmos Wideband integrated power amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输ldmos的宽带集成功率放大器

File Size 665.04K  /  16 Page

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    0809LD30

Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 0809LD30
Description Compant High-Insulation power Relay, Polarized, 10A 30瓦,28V的,1 GHz的ldmos的场效应
30 Watt / 28V / 1 Ghz ldmos FET
30 WATT 28V 1 GHz ldmos FET
30 WATT, 28V, 1 GHz ldmos FET

File Size 16.67K  /  1 Page

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    MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MRF6S9045N MRF6S9045NBR1 MRF6S9045NR1 MRF9200LR306 MRF9200LSR3 MW5IC2030

FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
Part No. MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 Mrf6S9045N Mrf6S9045NBR1 Mrf6S9045NR1 Mrf9200LR306 Mrf9200LSR3 MW5IC2030MBR106 MW5IC2030NBR1065 MW6IC2015GNBR1 MW6IC2015NBR1 NE76184A-TI MJE3055T MJE2955T
Description    COMPLEMENTARY SILICON power TRANSISTORS
COMPLEMETARY SILICON power TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP power TRANSISTOR
SILICON NPN power DARLINGTON TRANSISTOR
rf power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
rf ldmos Wideband integrated power amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, power TRANSISTOR, TO-220AB

File Size 57.87K  /  4 Page

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    LB421-14

Polyfet rf Devices
Part No. LB421-14
Description rf power ldmos TRANSISTOR
   SILICON GATE ENHANCEMENT MODE rf power ldmos TRANSISTOR

File Size 53.30K  /  2 Page

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    0809LD30P

Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 0809LD30P
Description Compant High-Insulation power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz ldmos FET
30 WATT 28V 1 GHz ldmos FET
30 WATT, 28V, 1 GHz ldmos FET

File Size 15.67K  /  1 Page

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    NXP Semiconductors N.V.
Part No. BLS7G2325L-105 BLS7G2325L-105-15
Description power ldmos transistor BLS7G2325L-105<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
   power ldmos transistor

File Size 273.08K  /  9 Page

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