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15104XI SB060 MTZJ12B 8L151G4 12P1L 331M16 SB060 CR1910
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  rsh Datasheet PDF File

For rsh Found Datasheets File :: 868    Search Time::2.25ms    
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    ZETEX[Zetex Semiconductors]
Part No. ZXCT1081E5TA ZXCT1081
OCR Text ...ENSE across internal resistance rsh causing a current to flow through MOSFET M1. This current is then converted to a voltage by RG. A ratio of 10:1 between RG and rsh creates the fixed gain of 10. The output is then buffered by the unity ga...
Description High voltage high-side current monitor

File Size 605.81K  /  12 Page

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    Alliance Semiconductor
Part No. AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E0-45JC AS4LC256K16E0-45TC AS4LC256K16E0-60JC AS4LC256K16E0-60TC
OCR Text ...ay time 8 14 13 23 15 30 ns 7 t rsh(r) cas to ras hold time (read cycle) 10 ? 10 ? 12 ? ns t csh ras to cas hold time 35 ? 45 ? 60 ? ns t crp cas to ras precharge time 5 ? 5 ? 5 ? ns t asr row address setup time 0 ? 0 ? 0 ? ns t ra...
Description 3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM

File Size 522.34K  /  25 Page

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    AS4LC256K16EO

Alliance Semiconductor Corporation
Part No. AS4LC256K16EO
OCR Text ...ay time 8 14 13 23 15 30 ns 7 t rsh(r) cas to ras hold time (read cycle) 10 ? 10 ? 12 ? ns t csh ras to cas hold time 35 ? 45 ? 60 ? ns t crp cas to ras precharge time 5 ? 5 ? 5 ? ns t asr row address setup time 0 ? 0 ? 0 ? ns t ra...
Description 3.3V 256K×16 CMOS DRAM (EDO)(3.3V 256K×16 CMOS动态RAM(扩展数据总线

File Size 522.36K  /  25 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM44C1005D
OCR Text ... 10k 70 10k ns ras hold time t rsh 15 15 20 ns 18 cas hold time t csh 40 50 60 ns 21 cas pulse width t cas 8 10k 10 10k 15 10k ns 27 ras to cas delay time t rcd 20 35 20 45 20 50 ns 4,20 ras to column address delay time t rad 15 25 1...
Description 1M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(1M x 4位CMOSCAS 动态RAM(带扩展数据输)

File Size 394.90K  /  21 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM5368005BSW
OCR Text ... 10k 60 10k ns ras hold time t rsh 13 15 ns cas hold time t csh 38 45 ns cas pulse width t cas 8 10k 10 10k ns 4 ras to cas delay time t rcd 20 37 20 45 ns 9 ras to column address delay time t rad 15 25 15 30 ns cas to ras p...
Description 8M x 36 DRAM SIMM(8M x 36 动RAM模块)

File Size 393.31K  /  19 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM416C4100B
OCR Text ... 10k 60 10k ns ras hold time t rsh 12 13 15 ns cas hold time t csh 45 50 60 ns cas pulse width t cas 12 10k 13 10k 15 10k ns ras to cas delay time t rcd 18 33 20 37 20 45 ns 4 ras to column address delay time t rad 13 22 15 25 15 30 ...
Description 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

File Size 833.81K  /  35 Page

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    AS4C256K16E0

Alliance Semiconductor Corporation
Part No. AS4C256K16E0
OCR Text ...y time 10 14 11 17 15 25 ns 7 t rsh(r) cas to ras hold time (read cycle) 10 ?10?10?ns t csh ras to cas hold time 30 ?35?50?ns t crp cas to ras precharge time 5 ?5?5?ns t asr row address setup time 0 ?0?0?ns t rah row address hold t...
Description 5V 256K×16 CMOS DRAM (EDO)(5V 256K×16 CMOS动态RAM(扩展数据总线

File Size 520.62K  /  24 Page

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    AS4C256K16FO

Alliance Semiconductor Corporation
Part No. AS4C256K16FO
OCR Text ...lay time8 13101411171525 ns 7 t rsh(r) cas to ras hold time (read cycle) 7 ? 10 ? 10 ? 10 ? ns t csh ras to cas hold time 20 ? 30 ? 35 ? 50 ? ns t crp cas to ras precharge time 5?5?5?5?ns t asr row address setup time 0?0?0?0?ns t rah ...
Description 5V 256K × 16 CMOS DRAM (Fast Page Mode)(5V 256K × 16 CMOS动态RAM(快速页面模式))

File Size 511.80K  /  25 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM5361203C2W
OCR Text ... 10k 60 10k ns ras hold time t rsh 13 15 ns cas hold time t csh 50 60 ns cas pulse width t cas 13 10k 15 10k ns ras to cas delay time t rcd 20 37 20 45 ns 4 ras to column address delay time t rad 15 25 15 30 ns 10 cas to ras ...
Description 1M x 36 DRAM SIMM(1M x 36 动RAM模块)

File Size 235.89K  /  16 Page

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For rsh Found Datasheets File :: 868    Search Time::2.25ms    
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