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| Part No. |
RH119REVADICE
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| OCR Text |
...face damage because there is no silicon nitride passivation as on standard die. silicon nitride protects the die surface from scratches by its hard and dense properties. The passivation on Rad Hard die is silicon dioxide that is much "softe... |
| Description |
From old datasheet system
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| File Size |
103.30K /
2 Page |
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it Online |
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| Part No. |
RH137DICE
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| OCR Text |
...face damage because there is no silicon nitride passivation as on standard die. silicon nitride protects the die surface from scratches by its hard and dense properties. The passivation on Rad Hard die is silicon dioxide that is much "softe... |
| Description |
From old datasheet system
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| File Size |
52.89K /
2 Page |
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it Online |
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| Part No. |
RH27DICE
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| OCR Text |
...face damage because there is no silicon nitride passivation as on standard die. silicon nitride protects the die surface from scratches by its hard and dense properties. The passivation on Rad Hard die is silicon dioxide that is much "softe... |
| Description |
From old datasheet system
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| File Size |
51.33K /
2 Page |
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it Online |
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TOSHIBA
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| Part No. |
TPN6R003NL
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| OCR Text |
silicon n-channel mos (u-mos -h) tpn6r003nl tpn6r003nl tpn6r003nl tpn6r003nl start of commercial production 2013-07 1. 1. 1. 1. applications applications applications applications ? switching voltage regulators ? dc-dc converters 2. 2... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
234.96K /
9 Page |
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it Online |
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TOSHIBA
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| Part No. |
TPH5R906NH
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| OCR Text |
silicon n-channel mos (u-mos -h) tph5r906nh tph5r906nh tph5r906nh tph5r906nh start of commercial production 2011-11 1. 1. 1. 1. applications applications applications applications ? switching voltage regulators ? motor drivers ? dc-dc ... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
237.29K /
9 Page |
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it Online |
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| Part No. |
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| OCR Text |
silicon n-channel mos (u-mos -h) tk72e12n1 tk72e12n1 tk72e12n1 tk72e12n1 1. 1. 1. 1. applications applications applications applications ? switching voltage regulators 2. 2. 2. 2. features features features features (1) low drain-s... |
| Description |
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| File Size |
248.67K /
9 Page |
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it Online |
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semiconductors
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| Part No. |
TIC106 TIC106B TIC106M TIC106C TIC106D TIC106E TIC106Y
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| OCR Text |
...tic106e,tic106f,tic106m p-n-p-n silicon reverse-blocking triode thyristors ? silicon controlled rectifiers ? 50v to 600v ? 5 a dc ? 30 a surge current ? max iqt of 200 a device schematic to-z2dab package 1 the anode is in electrical contact... |
| Description |
P-N-P-N silicon REVERSE-BLOCKING TRIODE THYRISTORS
Thyristor SCR 400V 30A 3-Pin(3 Tab) TO-220
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| File Size |
125.71K /
3 Page |
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it Online |
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| Part No. |
SFH870
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| OCR Text |
...0 mm 100 mm 148
Technology q silicon planar p on n substrate q Substrate: 4600 1400 cm q Metallization: Topside: Contact Al 1.4 m Topside covered by Al 0.1 m Backside: Au/As 0.4 m Chip assembly Topside: Au or Al bonding Backside: epoxy ... |
| Description |
From old datasheet system
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| File Size |
304.84K /
4 Page |
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it Online |
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| Part No. |
SFH900
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| OCR Text |
... 5 mm q GaAs infrared emitter q silicon NPN phototransistor detector q Flat plastic package q Daylight filter against undesired light effects q High collector-emitter current o.25 ... 1.0 mA q Low saturation voltage q No cross talk
Appl... |
| Description |
From old datasheet system
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| File Size |
339.72K /
6 Page |
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it Online |
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