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Vishay Semiconductors
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Part No. |
IRKLF102-08HJ IRKLF112-08HN IRKLF102-06HK IRKLF102-12HK
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Description |
164.85 A, 800 V, SCR silicon controlled Rectifier, 250 A, 800 V, SCR, POWER, INT-A-PAK-5 silicon controlled Rectifier, 164.85 A, 600 V, SCR silicon controlled Rectifier, 164.85 A, 1200 V, SCR
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File Size |
30.50K /
1 Page |
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it Online |
Download Datasheet
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NTE[NTE Electronics]
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Part No. |
NTE5548 NTE5541 NTE5545
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Description |
silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A. silicon controlled Rectifier (SCR) 35 Amp
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File Size |
18.33K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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Part No. |
NTE5513 NTE5511 NTE5512
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Description |
silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A. silicon controlled Rectifier (SCR) 5 Amp
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File Size |
21.88K /
2 Page |
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it Online |
Download Datasheet
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TT electronics Semelab, Ltd.
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Part No. |
D2230UK
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Description |
Gold Metallised Multi-Purpose silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端) METAL gate RF silicon FET 金属门射频硅场效应管 METAL gate RF silicon FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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File Size |
17.37K /
2 Page |
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it Online |
Download Datasheet
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Price and Availability
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