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  -20v Datasheet PDF File

For -20v Found Datasheets File :: 43191    Search Time::1.64ms    
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    DIM300XCM45-F000

Dynex Semiconductor
Part No. DIM300XCM45-F000
OCR Text ...er saturation voltage VGE = 20V,VCE =0V IC =80mA,VGE =VCE VGE =15V,IC =300A VGE =15V,IC =300A,TVJ =125 C DC tp =1ms IF =300A IF =300A,TVJ =125 C VCE =25V,VGE =0V,f =1MHz VCE =25V,VGE =0V,f =1MHz -- 5.5 6.5 2.9 3.5 7.0 VCE(...
Description IGBT Chopper Module Provisional

File Size 176.88K  /  8 Page

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    IRF1010NLPBF IRF1010NSPBF IRF1010NSTRRPBF IRF1010NSPBF-15

International Rectifier
Part No. IRF1010NLPBF IRF1010NSPBF IRF1010NSTRRPBF IRF1010NSPBF-15
OCR Text ..., VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20v 120 ID = 43A 19 nC VDS = 44V 41 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 43A ns --- RG = 3.6 --- VGS = 10V, See Fig. 10 D Between lead, 4.5 --- 6mm (0.25in.) nH G from pack...
Description HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
Advanced Process Technology

File Size 287.24K  /  11 Page

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    IRF520NPBF

International Rectifier
Part No. IRF520NPBF
OCR Text ..., VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20v 25 ID = 5.7A 4.8 nC VDS = 80V 11 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 5.7A ns --- RG = 22 --- RD = 8.6, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package ...
Description HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET

File Size 167.25K  /  9 Page

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    SSF1320N

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
Part No. SSF1320N
OCR Text 20v , r ds(on) 58 m ? n-channel enhancement mode mosfet elektronische bauelemente 28-aug-2012 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs complia...
Description N-Channel Enhancement Mode MOSFET

File Size 393.40K  /  4 Page

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    CY62147DV30 CY62147DV30LL-70BVXA CY62147DV30L-55ZSXE CY62147DV30L-55BVXE

Cypress Semiconductor
Part No. CY62147DV30 CY62147DV30LL-70BVXA CY62147DV30L-55ZSXE CY62147DV30L-55BVXE
OCR Text ...: 45 ns * Wide voltage range: 2.20V-3.60V * Pin-compatible with CY62147CV25, CY62147CV30, and CY62147CV33 * Ultra-low active power -- Typical active current: 1.5 mA @ f = 1 MHz -- Typical active current: 8 mA @ f = fmax * Ultra low standby ...
Description 4-Mbit (256K x 16) Static RAM

File Size 366.84K  /  12 Page

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    IRFP3415PBF

International Rectifier
Part No. IRFP3415PBF
OCR Text ...0V, TJ = 150C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20v --- --- 200 ID = 22A --- --- 17 nC VDS = 120V --- --- 98 VGS = 10V, See Fig. 6 and 13 --- 12 --- VDD = 75V --- 55 --- ID = 22A ns --- 71 --- RG = 2.5 --- 69 --- RD = 3.3, See F...
Description Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET

File Size 159.20K  /  9 Page

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    Nihon Inter Electronics
Part No. PRHMB75E6
OCR Text ...e-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 75a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 75ma . . ...
Description IGBT MODULE

File Size 296.32K  /  4 Page

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    PMF63UN

NXP Semiconductors
Part No. PMF63UN
OCR Text ...drain-source voltage t j =25c --20v v gs gate-source voltage -8 - 8 v i d drain current v gs =4.5v; t amb =25c; t 5 s [1] --1.9a static characteristics r dson drain-source on-state resistance v gs =4.5v; i d = 1.8 a; t j = 25 c - 63 74 ...
Description single N-channel Trench MOSFET

File Size 320.11K  /  15 Page

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    IRFP4310ZPBF IRFP4310ZPBF-15

International Rectifier
Part No. IRFP4310ZPBF IRFP4310ZPBF-15
OCR Text ...V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20v Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Forward Transconductance Total ...
Description High Efficiency Synchronous Rectification in SMPS
HEXFET Power MOSFET

File Size 296.91K  /  8 Page

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