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Alpha & Omega Semiconductor
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Part No. |
AOTF27S60
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OCR Text |
...2.9 power dissipation b 480 40 gate-source voltage va t c =100c pulsed drain current c continuous drain current t c =25c i d 27* 27 a 7.5 c the aot27s60l & aob27s60l & aotf27s60l & aotf27s60 have been fabricated using the advanced mos t... |
Description |
Single HV MOSFETs (500V - 1000V)
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File Size |
475.03K /
7 Page |
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Wolfspeed
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Part No. |
PXAC243502FV-V1
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OCR Text |
...gs = 0 v i dss ? ? 10 a gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1 a on-state resistance main v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.088 ? w peak v gs = 10 v, v ds = 0.1 v r ds(on) ? 0... |
Description |
High Power RF LDMOS FET 350W, 28V, 2300 - 2400 MHz
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File Size |
337.52K /
10 Page |
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it Online |
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Nexperia
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Part No. |
PMZ320UPE
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OCR Text |
...n-source voltage - - -30 v v gs gate-source voltage t j = 25 c -8 - 8 v i d drain current v gs = -4.5 v; t amb = 25 c [1] - - -1 a static characteristics r dson drain-source on-state resistance v gs = -4.5 v; i d = -1 a; t j = 25 c - ... |
Description |
30 V, P-channel Trench MOSFET
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File Size |
307.64K /
15 Page |
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it Online |
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Nexperia
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Part No. |
PMZ130UNE
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OCR Text |
...in-source voltage - - 20 v v gs gate-source voltage t j = 25 c -8 - 8 v i d drain current v gs = 4.5 v; t amb = 25 c [1] - - 1.8 a static characteristics r dson drain-source on-state resistance v gs = 4.5 v; i d = 1.8 a; t j = 25 c - ... |
Description |
20 V, N-channel Trench MOSFET
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File Size |
314.36K /
14 Page |
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it Online |
Download Datasheet
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