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1.2f Datasheet PDF File

For 1.2f Found Datasheets File :: 434 Search Time::1.906ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CM600HU-12F
OCR Text	12F HIGH POWER SWITCHING USE CM600HU-12F IC ................................................................... 600A VCES ............................................................ 600V Insulated Type 1-elements in a pack APPLIC...
Description	HIGH POWER SWITCHING USE
File Size	53.83K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM600HU-12F CM600HU-12F09
OCR Text	12F HIGH POWER SWITCHING USE CM600HU-12F IC ................................................................... 600A VCES ............................................................ 600V Insulated Type 1-elements in a pack APPLIC...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	125.00K / 4 Page	View it Online	Download Datasheet

				Powerex Power Semiconductor... POWEREX[Powerex Power Semiconductors]
Part No.	CM300DU-12F
OCR Text	12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMODTM 300 Amperes/600 Volts TC MEASURING POINT A D T (4 TYP.) F G2 BE CM E2 H U J H C2E1 E2 C1 ...
Description	Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/600 Volts Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/600 Volts Trench Gate Design Dual IGBTMOD 300 Amperes/600 Volts
File Size	64.44K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	CM150TU-12F
OCR Text	12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMODTM 150 Amperes/600 Volts J S - NUTS (5 TYP) CM N P K K R T (4 TYP.) P GUP EUP GVP EVP GWP EWP L B...
Description	Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts 240 x 128 pixel format, CFL Backlight with power harness
File Size	133.38K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CM150TU-12F
OCR Text	12F HIGH POWER SWITCHING USE CM150TU-12F IC ................................................................... 150A VCES ............................................................ 600V Insulated Type 6-elements in a pack APPLIC...
Description	240 x 128 pixel format, CFL Backlight with power harness HIGH POWER SWITCHING USE
File Size	77.38K / 4 Page	View it Online	Download Datasheet

				Powerex, Inc. POWEREX[Powerex Power Semiconductors]
Part No.	CM100TJ-12F
OCR Text	12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMODTM 100 Amperes/600 Volts A D E F 19 18 NOT CONNECTED U G NOT CONNECTED H 17 16 15 20 14 B ...
Description	128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT Trench Gate Design 100 Amperes/600 Volts
File Size	97.94K / 4 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC[ETC]
Part No.	FLM8596-12F
OCR Text	12F X, Ku-Band Internally Matched FET FEATURES * * * * * * * High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: add = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Z...
Description	X, Ku-Band Internally Matched FET
File Size	256.24K / 4 Page	View it Online	Download Datasheet

				Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
Part No.	CM100DU-12F
OCR Text	12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMODTM 100 Amperes/600 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1 ...
Description	Trench Gate Design Dual IGBTMOD?100 Amperes/600 Volts Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/600 Volts Trench Gate Design Dual IGBTMOD 100 Amperes/600 Volts
File Size	104.08K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM100DU-12F
OCR Text	12F HIGH POWER SWITCHING USE CM100DU-12F IC ................................................................... 100A VCES ............................................................ 600V Insulated Type 2-elements in a pack APPLIC...
Description	HIGH POWER SWITCHING USE
File Size	42.98K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC
Part No.	FLM0910-12F
OCR Text	12F X-Band Internally Matched FET FEATURES High Output Power: P1dB=40.5dBm(Typ.) High Gain: G1dB=7.0dB(Typ.) High PAE: add=25%(Typ.) Broad Band: 9.5~10.5GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM09...
Description	X-Band Internally Matched FET
File Size	179.44K / 5 Page	View it Online	Download Datasheet

For 1.2f Found Datasheets File :: 434 Search Time::1.906ms
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