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    30-P2126PA100NB-L289F69Y

Vincotech
Part No. 30-P2126PA100NB-L289F69Y
Description Compact and low inductive design

File Size 1,040.92K  /  16 Page

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HUA FENG CIRCUIT





    飞思卡尔半导体(中国)有限公司
Part No. MRF6S18100NBR1
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外

File Size 703.35K  /  20 Page

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Part No. EDI88512C EDI88512C100NB
Description 512Kx8 Monolithic SRAM(512Kx8 CMOS单片静态RAM) 512Kx8单片的SRAM512Kx8的CMOS单片静态内存)

File Size 99.63K  /  7 Page

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    Freescale Semiconductors
Part No. MRF6S21100NBR1 MRF6S21100N
Description  Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz

File Size 510.14K  /  12 Page

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    Freescale Semiconductor
Part No. MRF5S9100NBR1 MRF5S9100NR1
Description SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

File Size 552.60K  /  16 Page

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    White Electronic Designs
Part No. EDI88512C_LP-C EDI88512C_LP-N EDI88512C/LP-N EDI88512C/LP-C EDI88512LP100NB
Description 100ns; 5V power supply; 512K x 8 monolithic SRAM CMOS
SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R

File Size 121.06K  /  7 Page

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    MRF6S19100N MRF6S19100NBR1 MRF6S19100NR1

Freescale Semiconductor, Inc
Part No. MRF6S19100N MRF6S19100NBR1 MRF6S19100NR1
Description RF Power Field Effect Transistors

File Size 613.04K  /  16 Page

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    MRF6S18100NR1 MRF6S18100NBR1

Freescale Semiconductor, Inc
Part No. MRF6S18100NR1 MRF6S18100NBR1
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 693.63K  /  20 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF6S21100NR1 MRF6S21100NBR1
Description RF Power Field Effect Transistors

File Size 852.71K  /  18 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF7S19100NBR1 MRF7S19100NR1
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 529.22K  /  15 Page

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