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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IXFH76N07-12 IXFH76N06-11 IXFH76N06-12 IXFH76N07-11 IXYSCORP-IXFH76N06-12
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| OCR Text |
12 IXFH 76 N07-11 IXFH 76 N07-12 60 V 60 V 70 V 70 V
ID25 76 A 76 A 76 A 76 A
RDS(on) 11 mW 12 mW 11 mW 12 mW
Preliminary data shee...ns
TO-247 AD
(TAB)
G = Gate, S = Source, Features
q
D = Drain, TAB = Drain
TC = 25C ... |
| Description |
HiPerFET Power MOSFETs 76 A, 60 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 76 A, 70 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
HiPerFET Power MOSFETs 76 A, 70 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
HiPerFET Power MOSFETs 76 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
78.83K /
4 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
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| Part No. |
HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM62W8511HCJP-12 HM62W8511HCLJP-10
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| OCR Text |
...3.3 V 0.3 V * Access time : 10/12 ns (max) * Completely static memory No clock or timing strobe required * Equal access and cycle times * Directly TTL compatible All inputs and outputs * Operating current : 115/100 mA (max) * TTL standby... |
| Description |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (512-kword x 8-bit)
BOX 5.0X1.85X1.0 W/CLP BLK
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| File Size |
160.74K /
16 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
HM62W16255HCTTI-12 HM62W16255CJPI12 HM62W16255CTTI12 HM62W16255HCI HM62W16255HCJPI-12
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| OCR Text |
...pply: 3.3 V 0.3 V Access time: 12 ns (max) Completely static memory No clock or timing strobe required Equal access and cycle times Directly TTL compatible All inputs and outputs Operating current: 130 mA (max) TTL standby current: 40 mA... |
| Description |
Wide Temperature Range Version 4M High Speed SRAM (256-kword ′ 16-bit)
Wide Temperature Range Version 4M High Speed SRAM (256-kword ? 16-bit)
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| File Size |
77.75K /
17 Page |
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it Online |
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Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
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| Part No. |
FS7VS-12
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| OCR Text |
12
HIGH-SPEED SWITCHING USE
FS7VS-12
OUTLINE DRAWING
r
Dimensions in mm 4.5 1.3
1.5MAX. 8.6 0.3 9.8 0.5
3.0 -0.5
+0.3
...ns ns ns ns V C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakag... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
46.66K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FS7UM-12
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| OCR Text |
12
HIGH-SPEED SWITCHING USE
FS7UM-12
OUTLINE DRAWING
10.5MAX. r
Dimensions in mm
4.5 1.3
3.2
16
12.5MIN.
3.8MAX.
...ns ns ns ns V C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakag... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
48.00K /
4 Page |
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it Online |
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Price and Availability
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