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13.5168 Datasheet PDF File

For 13.5168 Found Datasheets File :: 20 Search Time::1.078ms
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					Infineon Technologies AG
Part No.	IPB049NE7N3G
OCR Text	...c 68-1 55/175/56 3) see figure 13 for more detailed informatio n value 1) j-std20 and jesd22 2) see figure 3 for more detailed information...5168 gate plateau voltage v plateau - 5.5 - v output charge q oss v dd =37.5 v, v gs =0 v -5371nc r...
Description	OptiMOSTM3 Power-Transistor
File Size	258.81K / 9 Page	View it Online	Download Datasheet

					Citizen Finetech Miyota
Part No.	HC-49-U-24MHZ HC-49-U-8MHZ HC-49-U-4.00000MHZ HC-49-U-6.00000MHZ HC-49-U-48MHZ HC-49-U-12.00000MHZ HC-49-U-11.059520MHZ
OCR Text	... type c (um-1) type b (hc-51/u) 13.49 max .531 m a x .472 min 12.00 min .017 dia 0.43 dia .192 4.88 .435 max 11.05 max .183 max 4.65 max .7...5168 a c 25 40 2.4576 b a 400 400 14.31818 a c 25 35 3.000 b a 150 200 14.7456 a c 25 35 3.2768 b a ...
Description	LOW PROFILE MICROPROCESSOR CRYSTALS(晶振) 低收缩微处理器晶体（晶振
File Size	80.23K / 3 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	BSO033N03MSG
OCR Text	... =22 a 46 93 - s 3) see figure 13 for more detailed information values 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one l...5168 reverse diode diode continuous forward current i s - - 3.6 a diode pulse current i s,pulse - - ...
Description	OptiMOS? M-Series Power-MOSFET
File Size	327.16K / 9 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	IPD068N10N3G
OCR Text	...ge 6 2008-10-21 ipd068n10n3 g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =90 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge wav...
Description	OptiMOS3 Power-Transistor
File Size	290.78K / 9 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	IPP072N10N3G
OCR Text	... ipp072n10n3 g ipi072n10n3 g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =80 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge wav...
Description	OptiMOS?3 Power-Transistor
File Size	309.61K / 10 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	BSC060N10NS3G
OCR Text	...q gd -9- switching charge q sw -13- gate charge total q g -5168 gate plateau voltage v plateau - 4.2 - v output charge q oss v dd =50 v, v gs =0 v -6891nc reverse diode diode continous forward current i s - - 90 a diode pulse current i s,p...
Description	OptiMOS3 Power-Transistor
File Size	411.86K / 10 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	IRFP4137PBF IRFP4137PBF-15
OCR Text	... reverse recovery current ??? 13 ??? a t j = 25c ? d s g notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? recommended max eas limit, starting t j = 25c, l = 2.05mh, r g = 50 ? , i as = 2...
Description	Improved Gate, Avalanche and Dynamic dV/dt Ruggedness High Efficiency Synchronous Rectification in SMPS
File Size	376.24K / 8 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	IRFB4137PBF IRFB4137PBF-15
OCR Text	... reverse recovery current ??? 13 ??? a t j = 25c ? d s g notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? recommended max eas limit, starting t j = 25c, l = 1.56mh, r g = 50 ? , i as = 2...
Description	High Efficiency Synchronous Rectification in SMPS High Efficiency Synchronous Rectification in SMPS
File Size	385.50K / 8 Page	View it Online	Download Datasheet

					Hittite Microwave Corporation Hittite Microwave Corpo...
Part No.	HMC535LP409 HMC535LP4E
OCR Text	... vs. tuning voltage, vcc1 = +5v 13.8 14.3 14.8 15.3 15.8 024681012 vcc= 4.75v vcc= 5.00v vcc= 5.25v output frequency (ghz) tuning voltage (v...5168 5.25 180 electrostatic sensitive device observe handling precautions notes: 1. leadframe mater...
Description	PHASE-LOCKED OSCILLATOR, 14.7 - 15.4 GHz PHASE-LOCKED OSCILLATOR, 14.7 - 15.4 GHz
File Size	428.25K / 10 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	AUIRFP4409
OCR Text	... reverse recovery current ??? 13 ??? a t j = 25c ? d s g notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? recommended max eas limit, starting t j = 25c, l = 2.05mh, r g = 50 ? , i as = 2...
Description	HEXFET? Power MOSFET
File Size	376.01K / 9 Page	View it Online	Download Datasheet

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