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  15.211 Datasheet PDF File

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    BUK9215-55A-15

NXP Semiconductors
Part No. BUK9215-55A-15
OCR Text ...= 25 c; fig. 11 ; fig. 12 - 13 15 m dynamic characteristics q gd gate-drain charge v gs = 5 v; i d = 25 a; v ds = 44 v; t j = 25 c; fi...211 mj [1] current is limited by power dissipation chip rating. 5. pinning information table 2. pinn...
Description N-channel TrenchMOS logic level FET

File Size 267.87K  /  13 Page

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    RJP1CS04DWTRJP1CS04DWT-15

Renesas Electronics Corporation
Part No. RJP1CS04DWTRJP1CS04DWT-15
OCR Text ...v typ. (at i c = 50 a, v ge = 15 v, tc = 25 c) ? high speed switching ? short circuit withstands time (10 s min.) outline 1....211-6503-0, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. room 1709, quantum plaza, n...
Description 1250V - 50A - IGBT Application: Inverter

File Size 63.71K  /  4 Page

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    RJP1CS03DWT-15

Renesas Electronics Corporation
Part No. RJP1CS03DWT-15
OCR Text ...v typ. (at i c = 30 a, v ge = 15 v, tc = 25 c) ? high speed switching ? short circuit withstands time (10 s min.) outline 1. g...211-6503-0, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. room 1709, quantum plaza, n...
Description 1250V - 30A - IGBT Application: Inverter

File Size 64.19K  /  4 Page

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    RJP1CS05DWT-15

Renesas Electronics Corporation
Part No. RJP1CS05DWT-15
OCR Text ...v typ. (at i c = 75 a, v ge = 15 v, tc = 25 c) ? high speed switching ? short circuit withstands time (10 s min.) outline 1....211-6503-0, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. room 1709, quantum plaza, n...
Description 1250V - 75A - IGBT Application: Inverter

File Size 63.65K  /  4 Page

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    RJP1CS06DWT-15

Renesas Electronics Corporation
Part No. RJP1CS06DWT-15
OCR Text ... typ. (at i c = 100 a, v ge = 15 v, tc = 25 c) ? high speed switching ? short circuit withstands time (10 s min.) outline 1....211-6503-0, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. room 1709, quantum plaza, n...
Description 1250V - 100A - IGBT Application: Inverter

File Size 64.15K  /  4 Page

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    RJP1CS07DWT-15

Renesas Electronics Corporation
Part No. RJP1CS07DWT-15
OCR Text ... typ. (at i c = 150 a, v ge = 15 v, tc = 25 c) ? high speed switching ? short circuit withstands time (10 s min.) outline 1....211-6503-0, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. room 1709, quantum plaza, n...
Description 1250V - 150A - IGBT Application: Inverter

File Size 64.32K  /  4 Page

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    RJP1CS08DWT-15

Renesas Electronics Corporation
Part No. RJP1CS08DWT-15
OCR Text ... typ. (at i c = 200 a, v ge = 15 v, tc = 25 c) ? high speed switching ? short circuit withstands time (10 s min.) outline 1....211-6503-0, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. room 1709, quantum plaza, n...
Description 1250V - 200A - IGBT Application: Inverter

File Size 64.22K  /  4 Page

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    NXPSC04650-15

NXP Semiconductors
Part No. NXPSC04650-15
OCR Text ... a c ( 2 - l e a d ) sod059a_po 15-03-24 15-03-30 unit m m max nom min 4.7 4.3 1.40 1.15 1.70 1.17 0.65 0.45 15.8 15.6 6.8 6.4 5.08 (ref) 6.9 (ref) 16.25 15.70 3.80 3.53 a dimensions: (mm are the original dimensions) note 1. protruded damb...
Description Silicon Carbide Diode

File Size 151.65K  /  9 Page

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    RJP4301APP-M0-15

Renesas Electronics Corporation
Part No. RJP4301APP-M0-15
OCR Text ...ackage name to-220fl 3.6 0.3 15.0 0.3 12.5 0.5 10.0 0.3 6.5 0.3 3.2 0.2 0.75 0.15 1.15 0.2 2.54 0.25 2.54 0....211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, n...
Description Nch IGBT for Strobe Flash

File Size 53.86K  /  5 Page

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    Infineon Technologies A...
Part No. IPZ60R040C7-15
OCR Text .... . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...211 a t c =25c avalanche energy, single pulse e as - - 249 mj i d =7.4a; v dd =50v; see table 10 ava...
Description Metal Oxide Semiconductor Field Effect Transistor

File Size 1,471.58K  /  15 Page

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