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Infineon Technologies
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| Part No. |
BSP308
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| OCR Text |
...
8
10
12
14
16
18nc 21
-20
20
60
100
C
180
QGate
Tj
Page 8
1999-09-22
Preliminary data
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (... |
| Description |
Sipmos(r) Small-signal-transistor
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| File Size |
106.50K /
9 Page |
 View
it Online |
Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF5N50CF FQPF5N50CFTU
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| OCR Text |
...0 V * Low gate charge ( typical 18nc) * Low Crss ( typical 15pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using F... |
| Description |
Low gate charge ( typical 18nc)
500V N-Channel MOSFET
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| File Size |
653.77K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRF6636
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| OCR Text |
...h) Ultra Low Package Inductance 18nc 6.1nC 1.9nC 7.3nC 10nC 1.8V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for for Control FET socket of Sync. Buck Converter Low Conduction and Switching Losses Com... |
| Description |
Low Resistance and Low Charge Along With Ultra Low Package Inductance to Reduce
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| File Size |
230.00K /
9 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRF7805Z
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| OCR Text |
...DSS
RDS(on) max
Qg (typ.) 18nc
30V 6.8m:@VGS = 10V
S S S G
1 2 3 4
8 7
A A D D D D
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ ... |
| Description |
HEXFET Power MOSFET
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| File Size |
267.30K /
10 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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