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  2.38mh Datasheet PDF File

For 2.38mh Found Datasheets File :: 51    Search Time::1.5ms    
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    IRHNA7160 IRHNA3160 IRHNA4160 IRHNA8160

IRF[International Rectifier]
Part No. IRHNA7160 IRHNA3160 IRHNA4160 IRHNA8160
OCR Text 2) Product Summary Part Number Radiation Level IRHNA7160 100K Rads (Si) IRHNA3160 300K Rads (Si) IRHNA4160 600K Rads (Si) IRHNA8160 1000K ...38mH Peak IL = 51A, VGS = 12V ISD 51A, di/dt 410A/s, VDD 100V, TJ 150C Pulse width 300 s; D...
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

File Size 106.42K  /  8 Page

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    IRHNB7160 IRHNB8160 IRHNB3160 IRHNB4160

IRF[International Rectifier]
Part No. IRHNB7160 IRHNB8160 IRHNB3160 IRHNB4160
OCR Text ...perature Weight 51 32.5 204 300 2.4 20 500 51 30 7.3 -55 to 150 300 ( for 5 sec) 3.5 (Typical ) Pre-Irradiation Units A W W/C V mJ ...38mH Peak IL = 51A, VGS =12V ISD 51A, di/dt 410A/s, VDD 100V, TJ 150C Pulse width 300 s; D...
Description 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)

File Size 99.97K  /  8 Page

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    FDS3692

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS3692
OCR Text ... Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VG...38mH, IAS = 3A. 2: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance whe...
Description Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package
N-Channel PowerTrench?? MOSFET 60V, 45A, 20m???
N-Channel PowerTrench MOSFET 100V, 45A, 60mohm

File Size 209.09K  /  11 Page

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    FQB6N80 FQI6N80 FQB6N80TM

FAIRCHILD[Fairchild Semiconductor]
http://
Part No. FQB6N80 FQI6N80 FQB6N80TM
OCR Text ...B6N80 / FQI6N80 800 5.8 3.67 23.2 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source Voltag...38mH, IAS = 5.8A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 5.8A, di/dt 200A/s, VDD BVDSS, St...
Description 800V N-Channel QFET
800V N-Channel MOSFET

File Size 682.20K  /  9 Page

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    IRHMS57264SE

IRF[International Rectifier]
Part No. IRHMS57264SE
OCR Text ...Pre-Irradiation Min 250 -- -- 2.5 27 -- -- -- -- -- -- -- -- -- -- -- -- Electrical Characteristics @ Tj = 25C (Unless Otherwise Specif...38mH Peak IL = 37A, VGS =12V A ISD 37A, di/dt 1040A/s, VDD 250V, TJ 150C 12 volt VGS applied and...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 250V, N-CHANNEL

File Size 180.92K  /  8 Page

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    ALLEGRO[Allegro MicroSystems]
Part No. A3976KLB 3976 A3973KB
OCR Text ...cal isolation. VBB 1 ENABLE1 2 PHASE1 3 n/c 4 n/c 5 GROUND 6 GROUND 7 n/c 8 OUT1A 9 n/c 10 FAULT1 11 OUT1B 12 24 VCC 23 ENABLE2 22 PHA...38mH. wait for that particular logic state after the short has been removed before normal operation ...
Description From old datasheet system
DUAL FULL BRIDGE PROTECTED MOTOR DRIVER

File Size 55.57K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT1101RSFLL APT1101RBFLL
OCR Text ...ain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 1100 1.00 100 500 100 3 5 (VGS = 10V, 6.5A) Ohms A nA Volts 1...38mH, RG = 25, Peak IL = 13A 5 dv/dt numbers reflect the limitations of the test circuit rather than...
Description 13 A, 1100 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
POWER MOS 7 FREDFET

File Size 102.75K  /  5 Page

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    FQU9N08L FQD9N08 FQD9N08L

FAIRCHILD[Fairchild Semiconductor]
http://
Part No. FQU9N08L FQD9N08 FQD9N08L
OCR Text ...08L 80 7.4 4.68 29.6 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source Voltage Single Puls...38mH, IAS = 7.4A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 9.3A, di/dt 300A/s, VDD BVDSS, St...
Description 80V LOGIC N-Channel MOSFET

File Size 542.03K  /  9 Page

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    FQU9N08 FQD9N08 FQD9N08TM

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FQU9N08 FQD9N08 FQD9N08TM
OCR Text ...N08 80 7.4 4.68 29.6 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source Voltage Single Puls...38mH, IAS = 7.4A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 9.3A, di/dt 300A/s, VDD BVDSS, St...
Description    80V N-Channel MOSFET
80V N-Channel QFET

File Size 534.72K  /  9 Page

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