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250ua Datasheet PDF File

For 250ua Found Datasheets File :: 4104 Search Time::1.156ms
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				Advanced Power Electronics Corp.
Part No.	AP09T10GH-HF
OCR Text	...reakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =3a - - 300 m v gs =4.5v, i d =1.5a - - 600 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transco...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	47.68K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP20N15AGI-HF14
OCR Text	...reakdown voltage v gs =0v, i d =250ua 150 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =10a - - 100 m v gs =4.5v, i d =6a - - 110 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transcon...
Description	Simple Drive Requirement
File Size	56.96K / 4 Page	View it Online	Download Datasheet

				SamHop Microelectronics Corp.
Part No.	STB434S
OCR Text	...shold voltage v ds =v gs , i d =250ua v ds =32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter condit...
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
File Size	231.54K / 8 Page	View it Online	Download Datasheet

				SamHop Microelectronics Corp.
Part No.	STB432S
OCR Text	...shold voltage v ds =v gs , i d =250ua v ds =32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter condit...
Description	N-Channel Logic Enhancement Mode Field Effect Transistor
File Size	240.27K / 8 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP6942GMT-HF
OCR Text	...reakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =12a - - 9 m v gs =4.5v, i d =8a - - 13.5 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transcondu...
Description	Good Thermal Performance, Fast Switching Performance
File Size	125.99K / 7 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP0803GMP-HF
OCR Text	...reakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 9.5 m ? v gs =4.5v, i d =20a - - 13 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transco...
Description	Simple Drive Requirement, Low On-resistance
File Size	94.70K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP0103GMT-HF AP0103GMT-HF14
OCR Text	...reakdown voltage v gs =0v, i d =250ua 38 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - 2.2 2.55 m ? v gs =4.5v, i d =20a - 2.9 3.6 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.6 3 v g fs forward...
Description	Simple Drive Requirement, SO-8 Compatible with Heatsink
File Size	92.81K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9561AGH-HF AP9561AGH-HF14
OCR Text	...eakdown voltage v gs =0v, i d =-250ua -40 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-24a - - 18 m v gs =-4.5v, i d =-20a - - 26 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward tr...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
File Size	57.37K / 4 Page	View it Online	Download Datasheet

				SemiWell Semiconductor
Part No.	SFF12N60
OCR Text	...ebreakdownvoltage v gs =0v,i d =250ua 600 v bv dss / t j breakdown voltage temperature coefficient i d =250ua,referenceto25 0.7 v/ i dss zerogatevoltagedraincurrent v ds =600v,v gs =0v v ds =480v,t s =125 1 10 ua i gssf ...
Description	N-Channel MOSFET
File Size	99.32K / 3 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electronics ...
Part No.	AP9992GP-A-HF AP9992GP-A-HF-14
OCR Text	...reakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 2.99 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =40a - ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
File Size	55.97K / 4 Page	View it Online	Download Datasheet

For 250ua Found Datasheets File :: 4104 Search Time::1.156ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |