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  3.3v 5v dc-dc Datasheet PDF File

For 3.3v 5v dc-dc Found Datasheets File :: 69361    Search Time::4.625ms    
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    2SA2093

ROHM[Rohm]
Part No. 2SA2093
OCR Text ...00mV at IC = -1.0A, IB = -0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5880 !External dime...3V VCE= -2V -1 -1 IC / IB=20/1 IC / IB=10/1 10 -0.1 Ta=125C Ta=25C Ta= -40C -0.1 ...
Description Power transistor ( 60V/2A)
Power transistor (−60V, −2A)
Power transistor (-60V, -2A)

File Size 81.67K  /  4 Page

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    2SA2113

ROHM[Rohm]
Part No. 2SA2113
OCR Text ...-200mV at IC = -1A, IB = -0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5916 !External dime...3V VCE= -2V -1 Ta=125C Ta=25C Ta= -40C -0.1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) DC...
Description Medium power transistor ( 30V/2A)
Medium power transistor (−30V, −2A)
Medium power transistor (-30V, -2A)

File Size 42.97K  /  4 Page

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    2SB1181 2SB1260 2SB1241

ROHM[Rohm]
Part No. 2SB1181 2SB1260 2SB1241
OCR Text ..., IC=-1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. !External dimensions (Units : mm) 2SB1260 ...3V, IC=-0.1A Conditions !Packaging specifications and hFE Package Code Type 2SB1260 2SB1241 2SB1...
Description Power Transistor

File Size 78.57K  /  3 Page

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    2SB772 B772 UTC2SB772

友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 2SB772 B772 UTC2SB772
OCR Text ... 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER Collector-Base Voltage...3V,Ic=0 VCE=-2V,Ic=-20mA VCE=-2V,Ic=-1A Ic=-2A,IB=-0.2A Ic=-2A,IB=-0.2A VCE=-5v,Ic=-0.1A VCB=-10V,IE...
Description MEDIUM POWER LOW VOLTAGE TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR

File Size 45.29K  /  2 Page

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    2SB950 2SB950A 2SD1276A 2SD1276

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2SB950 2SB950A 2SD1276A 2SD1276
OCR Text ...150 -55 to +150 Unit V 16.70.3 3.10.1 14.00.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB95...3V, IC = - 0.5A VCE = -3V, IC = -3A VCE = -3V, IC = -3A IC = -3A, IB = -12mA IC = -5A, IB = -20mA VC...
Description Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

File Size 60.93K  /  2 Page

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    2SC5060 2SC5060TV2M

Rohm CO.,LTD.
Part No. 2SC5060 2SC5060TV2M
OCR Text ...ode has low voltage dispersion. 3) Strong protection against reverse power surges due to "L" loads. 4) Darlington connection for high DC cur...3V, IC=0.5A IC/IB=500mA/1mA IC/IB=500mA/1mA VCB=5v, IE=-0.1A, f=30MHz VCE=10V, IE=0A, f=1MHz IC=0.8A...
Description Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Power transistor (9010V, 3A)
Power transistor (9010V/ 3A)
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits

File Size 50.71K  /  1 Page

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    2SD1024

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1024
OCR Text ...ts I =B2 8mA = Max 5 Es B1 I R= 3 L Fall Time tf V = 4V Max 3 BB2 2SD1024 hFE - I C 10000 50C 100C Tc = 150C DC Current Gain hFE 1000 25C VCE = 3V Pulse width = 300s 1 10 12 0C -25C -55C 100 0.1 Co...
Description Darlington Transistor(8A NPN)

File Size 275.54K  /  8 Page

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    2SD1025

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1025
OCR Text ... 2SD1025 Saturation Voltage 3.2 3A 5A 8A 12A 2.8 3.2 1A 2.8 2.4 8A IC = 0.5A 12A 2.4 2 5A 3A 2 1.6 1.6 1A 1.2 1.2 IC = 0.5A Collector-Emitter Voltage V CE [V] 0.4 0.4 Tc = 25C Pulse mea...
Description Darlington Transistor(8A NPN)

File Size 343.47K  /  8 Page

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    2SD1027

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1027
OCR Text ... IC = 10A IB1 = IB2 = 30mA RL = 3 VBB2 = 4V VCE(sat) VBE(sat) jc fT ton ts tf V V /W MHz s Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SD1027 hFE - I C VCE = 3V 10000 50C 100C Tc = 150C DC Current Gain...
Description Darlington Transistor(15A NPN)

File Size 456.51K  /  10 Page

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    2SD882S UTC2SD882S

Unisonic Technologies
Part No. 2SD882S UTC2SD882S
OCR Text ... TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25C ,unless otherwise specified ) PARAMETERS Collector-base voltage...3V,Ic=0 VCE=2V,Ic=20mA VCE=2V,Ic=1A Ic=2A,IB=0.2A Ic=2A,IB=0.2A VCE=5v,Ic=0.1A VCB=10V,IE=0,f=1MHz ...
Description NPN EPITAXIAL SILICON TRANSISTOR

File Size 73.22K  /  2 Page

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For 3.3v 5v dc-dc Found Datasheets File :: 69361    Search Time::4.625ms    
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