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  400v 20a Datasheet PDF File

For 400v 20a Found Datasheets File :: 1187    Search Time::1.469ms    
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    FGH20N60SFD

Fairchild Semiconductor
Part No. FGH20N60SFD
OCR Text ...(on) turn-on delay time v cc = 400v, i c = 20a, r g = 10 ? , v ge = 15v, inductive load, t c = 25 o c -13- ns t r rise time - 16 - ns t d(off) turn-off delay time - 90 - ns t f fall time - 24 48 ns e on turn-on switching loss - 0.37 ...
Description 600V, 20a, Field Stop IGBT

File Size 271.75K  /  9 Page

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    SKW15N60 SKB15N60 SKP15N60

INFINEON[Infineon Technologies AG]
Part No. SKW15N60 SKB15N60 SKP15N60
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 400v, VGE = 0/+15V, RG = 21) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25...20a 15A 10A 5A 0A 25C 50C 75C 100C 125C TC, CASE TEMPERATURE Figure 3. Power dissipat...
Description IGBTs & DuoPacks - 15A 600V TO247AC IGBT Diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast S-IGBT in NPT-Technology with An...

File Size 445.74K  /  14 Page

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    BYV29300M BYV29-300M BYV29-400M BYV29-500M BYV29-300SMD BYV29-500SMD

SEME-LAB[Seme LAB]
Infineon Technologies AG
NXP Semiconductors N.V.
TT electronics Semelab, Ltd.
Part No. BYV29300M BYV29-300M BYV29-400M BYV29-500M BYV29-300SMD BYV29-500SMD
OCR Text ...M 300V 200V 200V BYV29 -400M 400v 30V 300V 200A 9A BYV29 -500M 500V 400v 400v 100A -65 to 200C 200C Semelab plc. Telephone +4...20a IF = 5A IF = 1A di / dt = 50A/ms IF = 2A di / dt = 20a/ms IF = 2A di / dt = 20a/ms di / dt = 0A/...
Description 300V, 9A Fast Recovery Rectifier diode
3 A low drop positive voltage regulator adjustable and fixed
1.5 A low drop positive voltage regulator adjustable and fixed 快恢复整
Hermetically Sealed Fast Recovery Silicon Rectifier For HI-REL Application(气密封装的快速恢复硅整流HI-REL应用)) 密封快恢复硅整流对于高可靠性的应用(气密封装的快速恢复硅整流器(高可靠性应用)
HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS 8 A, 500 V, SILICON, RECTIFIER DIODE, TO-257AB

File Size 21.74K  /  2 Page

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    FGB20N60SF

Fairchild Semiconductor
Part No. FGB20N60SF
OCR Text ...(on) turn-on delay time v cc = 400v, i c = 20a, r g = 10 , v ge = 15v, inductive load, t c = 25 o c - 13 - ns t r rise time - 16 - ns t d(off) turn-off delay time - 90 - ns t f fall time - 24 48 ns e on turn-on switching loss - 0.37...
Description 600V, 20a, Field Stop IGBT

File Size 703.78K  /  8 Page

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    FGB20N60SFD

Fairchild Semiconductor
Part No. FGB20N60SFD
OCR Text ...(on) turn-on delay time v cc = 400v, i c = 20a, r g = 10 ? , v ge = 15v, inductive load, t c = 25 o c -13- ns t r rise time - 16 - ns t d(off) turn-off delay time - 90 - ns t f fall time - 24 48 ns e on turn-on switching loss - 0.37 ...
Description 600V, 20a, Field Stop IGBT

File Size 237.18K  /  9 Page

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    FMH20N60S1

Fuji Electric
Part No. FMH20N60S1
OCR Text ... i f -i d , -di/dt=100a/s, v dd 400v, t ch 150c. note *5 : i f -i d , dv/dt=15kv/s, v dd 400v, t ch 150c. http://www.fujielectric.com/produc...20a v gs =10v see fig.5 - 48 - nc gate-source charge q gs - 12.5 - gate-drain charge q gd - 15 - dra...
Description N-CHANNEL SILICON POWER MOSFET

File Size 461.72K  /  7 Page

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    IRF[International Rectifier]
Part No. IRHNB7460SE
OCR Text ....0mA VDS > 15V, IDS = 12A VDS= 400v ,VGS=0V VDS = 400v, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 20a VDS = 250V VDD =250V, ID =20a, VGS =12V, RG = 2.35 BVDSS Drain-to-Source Breakdown Voltage BV DSS /TJ Temperature Coeffi...
Description 500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-3 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)

File Size 240.33K  /  8 Page

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    FGAF20N60SMD

Fairchild Semiconductor
Part No. FGAF20N60SMD
OCR Text ...(on) turn-on delay time v cc = 400v, i c = 20a, r g = 10 , v ge = 15v, inductive load, t c = 25 o c - 12 - ns t r rise time - 22 - ns t d(off) turn-off delay time - 91 - ns t f fall time - 21 27 ns e on turn-on switching loss - 452 ...
Description 600V, 20a, Field Stop IGBT

File Size 953.88K  /  10 Page

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    IGB30N60T IGB30N60T09

Infineon Technologies AG
Part No. IGB30N60T IGB30N60T09
OCR Text ...me 2) v ge = 15v, v cc 400v, t j 150 c t sc 5 s power dissipation t c = 25 c p tot 187 w operating junction temper...20a 30a 40a 50a 60a 70a 80a 90a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0,1a...
Description Low Loss IGBT in TrenchStop technology

File Size 459.59K  /  12 Page

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    HGTH20N40C1D HGTH20N40E1D HGTH20N50C1D HGTH20N50E1D

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HGTH20N40C1D HGTH20N40E1D HGTH20N50C1D HGTH20N50E1D
OCR Text 400v and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDEC TO-218AC COLLECTOR (FLANGE) EMITTER COLLECTOR GATE Features * 20a, 400v and 500V * VCE(ON) 2.5V Max. * TFALL 1s, 0.5s * Low On-State Voltage * Fast Switc...
Description CAP 0.056UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 20 A, 400 V, N-CHANNEL IGBT, TO-218AC
20a, 400v and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
20a/ 400v and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

File Size 35.49K  /  6 Page

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For 400v 20a Found Datasheets File :: 1187    Search Time::1.469ms    
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