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  512kb 32k x 16 static ram Datasheet PDF File

For 512kb 32k x 16 static ram Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Elpida Memory, Inc.
EPCOS AG
STMicroelectronics N.V.
NEC, Corp.
Part No. UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 UPD4265400G5-A80 UPD4265400LE-A50 UPD4265400LE-A60 UPD4265400LE-A70 UPD4265400LE-A80 UPD4264400LE-A80 UPD4264400LE-A50 UPD4264400LE-A70 UPD4264400LE-A60 UPD4264400G5-A70 UPD4264400G5-A80 UPD4264400G5-A50
Description 2M x 8 static ram
256K x 4 static ram x4快速页面模式的Dram
512K x 32 static ram x4快速页面模式的Dram
3.3V 16K/32k x 36 FLEx36&#153; Synchronous Dual-Port static ram x4快速页面模式的Dram
x4 Fast Page Mode Dram x4快速页面模式的Dram
512K x 24 static ram x4快速页面模式的Dram
2-Mbit (128K x 16) static ram x4快速页面模式的Dram
128K x 8 static ram 128K的8静态ram
x4FastPageModeDram

File Size 488.69K  /  24 Page

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    Motorola, Inc.
Motorola Mobility Holdings, Inc.
Part No. MPC2104P MPC2105P
Description (MPC2104P / MPC2105P) 256KB/512kb Burstram Secondary Cache Modules for PowerPC PReP/CHRP Platforms
256KB/512kb Burstram Secondary Cache Modules for PowerPC PReP/CHRP Platforms 256KB/512kb Burstram二级缓存模块为PowerPC制备/ CH旺平
File Size 162.22K  /  16 Page

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    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. M38030F2L-xxxHP M38030F2L-xxxKP M38030F2L-xxxSP M38030F2L-xxxWG M38030MAL-xxxWG M38030MAL-xxxKP M38030FAL-xxxSP M38031FAL-xxxHP M38030FAL-xxxWG M38030MAL-xxxHP M38030FAL-xxxKP M38031FAL-xxxKP M38030FAL-xxxHP M38031FAL-xxxSP M38031FAL-xxxWG M38030MAL-xxxSP M38030F3L-xxxHP M38030F3L-xxxWG M38030M3L-xxxKP M38030F3L-xxxSP M38030F3L-xxxKP M38030M3L-xxxHP M38030FBL-xxxWG M38030MBL-xxxHP M38030FBL-xxxHP M38030FBL-xxxSP M38030MBL-xxxKP M38030M2L-xxxHP M38030M2L-xxxKP M38030M2L-xxxSP M38030M2L-xxxWG M38031F2L-xxxHP M38031F2L-xxxKP M38031F2L-xxxSP M38031F2L-xxxWG M38030FB-xxxHP M38031FBL-xxxSP M38035MBL-xxxSP M38038FBL-xxxSP M38039FBL-xxxSP M38030MBL-xxxSP M38036MBL-xxxSP M38037FBL-xxxSP M38037MBL-xxxSP M38036FBL-xxxSP M38038MBL-xxxSP M38031FC-xxxHP M38031FC-xxxKP M38031FC-xxxWG M38031FCL-xxxHP M38031FCL-xxxKP M38031FCL-xxxSP M38031FCL-xxxWG M38031F5-xxxKP M38031F5-xxxSP M38031F5-xxxWG M38031F5L-xxxHP M38031F5L-xxxKP M38031F5L-xxxSP M38031F5L-xxxWG M38030F1-xxxHP M38030F1-xxxKP M38030F1-xxxSP M38030F1-xxxWG M38030F1L-xxxHP M38030F1L-xxxKP M38030F1L-xxxSP M38030F1L-xxxWG M38031F1-xxxKP M38031F1-xxxWG M38031F1L-xxxHP M38031F1L-xxxKP M38031F6-xxxHP M38031F6-xxxKP M38031F6-xxxSP M38031F6-xxxWG M
Description 256 Kbit (32k x 8) nvSram; Organization: 32kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C
256K (32k x 8) static ram; Density: 256 Kb; Organization: 32kb x 8; Vcc (V): 4.50 to 5.50 V;
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12
8-Mbit (512K x 16) static ram; Density: 8 Mb; Organization: 512kb x 16; Vcc (V): 2.20 to 3.60 V;
9-Mbit (256K x 36/512K x 18) Pipelined Sram; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 512kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through Sram; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512kb x 18; Vcc (V): 3.1 to 3.6 V
18-Mbit QDR(TM)-II Sram 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512kb x 36; Vcc (V): 1.7 to 1.9 V
Four Output PCI-x and General Purpose Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C
18-Mbit QDR(TM)-II Sram 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512kb x 36; Vcc (V): 1.7 to 1.9 V
9-Mbit (256K x 36/512K x 18) Flow-Through Sram with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512kb x 18; Vcc (V): 2.4 to 2.6 V
4-Mbit (512K x 8) static ram; Density: 4 Mb; Organization: 512kb x 8; Vcc (V): 4.50 to 5.50 V;
4-Mbit (256K x 16) static ram; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V;
64K x 16 static ram; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
1-Mbit (64K x 16) static ram; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined Sram; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
1-Mbit (64K x 16) static ram; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
4 Mbit (512K x 8/256K x 16) nvSram; Organization: 512kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
4 Mbit (512K x 8/256K x 16) nvSram; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
16-Mbit (1M x 16 / 2M x 8) static ram; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V;
4K x 16/18 and 8K x 16/18 Dual-Port static ram with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns
9-Mbit (256K x 36/512K x 18) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through Sram with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V
9-Mbit (256K x 36/512K x 18) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512kb x 18; Vcc (V): 3.1 to 3.6 V
8-Mbit (512K x 16) static ram; Density: 8 Mb; Organization: 512kb x 16; Vcc (V): 4.50 to 5.50 V;
9-Mbit (256K x 36/512K x 18) Flow-Through Sram; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 static ram; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync Sram; Architecture: Standard Sync, Pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
4-Mbit (256K x 16) static ram; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1024K x 8) static ram; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
18-Mbit (512K x 36/1M x 18) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 static ram; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1M x 8) static ram; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C
18-Mbit (512K x 36/1M x 18) Flow-Through Sram with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512kb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
512K x 8 static ram; Density: 4 Mb; Organization: 512kb x 8; Vcc (V): 4.5 to 5.5 V;
18-Mbit (512K x 36/1M x 18) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512kb x 36; Vcc (V): 2.4 to 2.6 V
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C
2M x 8 static ram; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V;
16 Mbit (512K x 32) static ram; Density: 16 Mb; Organization: 512kb x 32; Vcc (V): 3.0 to 3.6 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C
8-Mbit (1M x 8) static ram; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V;
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6
2-Mbit (128K x 16) static ram; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V;
16-Mbit (1M x 16) static ram; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (256K x 18) Pipelined DCD Sync Sram; Architecture: Standard Sync, Pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V
512K (32k x 16) static ram; Density: 512 Kb; Organization: 32kb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (128K x 36) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
1M x 16 static ram; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C
MoBL(R) 2 Mbit (128K x 16) static ram; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
rambus(R) xDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4
2-Mbit (128K x 16) static ram; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
4-Mbit (128K x 36) Pipelined Sync Sram; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7
2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7
18-Mbit DDR-II Sram 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 18 Mb; Organization: 512kb x 36; Vcc (V): 1.7 to 1.9 V
Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC
Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机
Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机
8-Mbit (512K x 16) MoBL(R) static ram; Density: 8 Mb; Organization: 512kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V SDram Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) static ram; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机
MoBL(R) 1 Mbit (128K x 8) static ram; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
18-Mbit QDR(TM)-II Sram 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
1-Mbit (128K x 8) static ram; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机
4-Mbit (256K x 18) Pipelined Sync Sram; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
2-Mbit (64K x 32) Pipelined Sync Sram; Architecture: Standard Sync, Pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
200-MHz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) static ram; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
2-Mbit (256K x 8) static ram; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机
Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机
High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9
File Size 1,602.57K  /  119 Page

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    MF34M1-J8CATXX MF3257-J8CATXX MF31M1-J8CATXX MF32M1-J8CATXX MF365A-J8CATXX MF3129-J8CATXX MF3513-J8CATXX MF3129A-J8CATXX

Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. MF34M1-J8CATxx MF3257-J8CATxx MF31M1-J8CATxx MF32M1-J8CATxx MF365A-J8CATxx MF3129-J8CATxx MF3513-J8CATxx MF3129A-J8CATxx MF3513A-J8CATxx
Description 512kb, 8/16-bit data bus compact flash card
8/16-bit Data Bus static ram Card
static ram CARDS
128Kb, 8/16-bit data bus compact flash card
File Size 120.15K  /  16 Page

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    LPC1774FBD208 LPC1776FBD208 LPC1778FBD208 LPC1777FBD208 LPC1788FBD144 LPC1788FBD208 LPC1788FET208 LPC1778FBD144 LPC1778F

NxP Semiconductors
Part No. LPC1774FBD208 LPC1776FBD208 LPC1778FBD208 LPC1777FBD208 LPC1788FBD144 LPC1788FBD208 LPC1788FET208 LPC1778FBD144 LPC1778FET208
Description 128kB flash, 40kB Sram, USB, LQFP208 package
256kB flash, 80kB Sram, Ethernet, USB, LQFP208 package
512kb flash, 96kB Sram, Ethernet, USB, LQFP208 package
512kb flash, 96kB Sram, USB, LQFP208 package
512kb flash, 96kB Sram, Ethernet, USB, LCD, LQFP144 package
512kb flash, 96kB Sram, Ethernet, USB, LCD, LQFP208 package
512kb flash, 96kB Sram, Ethernet, USB, LCD, TFBGA208 package
512kb flash, 96kB Sram, Ethernet, USB, LQFP144 package
512kb flash, 96kB Sram, Ethernet, USB, TFBGA208 package
File Size 1,898.89K  /  121 Page

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    STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. 4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V401-200F1TR M27V401-200F6TR M27V401-200K1TR M27V401-200K6TR M27V401-200N1TR M27V401-200N6TR M27V401-120B1TR M27V401-120B6TR M27V401-120F1TR M27V401-120F6TR M27V401-120K1TR M27V401-120K6TR M27V401-120N1TR M27V401-120N6TR M27V401-150B1TR M27V401-150B6TR M27V401-150F1TR M27V401-150F6TR M27V401-150K1TR M27V401-150K6TR M27V401-150N1TR M27V401-150N6TR M27V401-180B1TR M27V401-180B6TR M27V401-180F1TR M27V401-180F6TR M27V401-180N6TR M27V401-180K1TR M27V401-180K6TR M27V401-180N1TR M27V400-100xF6TR -M27V401-200K6TR -M27V401-180K6TR -M27V401-180F1TR -M27V401-180N6TR -M27V401-150F6TR
Description 4 Mbit 512kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512kb的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512kb的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85
4 Mbit (512kb x8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
4 Mbit 512kb x8 or 256Kb x16 UV EPROM and OTP EPROM
File Size 101.72K  /  15 Page

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    Atmel, Corp.
Part No. CAT59C11P CAT59C11PI CAT59C11K-TE13 CAT59C11K-TE7 CAT59C11KI-TE13 CAT59C11KI-TE7
Description 256K x 4 static ram
2M x 8 static ram
Microwire Serial EEPROM
16-Mbit (2M x 8) static ram 微型导线串行EEPROM
512K x 32 static ram
File Size 216.82K  /  6 Page

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    Motorola, Inc.
Motorola Mobility Holdings, Inc.
Part No. MPC2105A MPC2106ASG66 MPC2105B
Description (MPC2105x / MPC2106x) 512kb and 1MB Burstram Secondary Cache Modules for PowerPC PReP/CHRP Platforms
512kb and 1MB Burstram Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K x 72 CACHE TAG Sram MODULE, 9 ns, DMA178
512kb and 1MB Burstram Secondary Cache Modules for PowerPC PReP/CHRP Platforms 512kbMB的二级缓存模块Burstram为PowerPC制备/ CH旺平
File Size 250.18K  /  20 Page

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    Advanced Micro Devices, Inc.
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. M27C400 6674 M27C400-80xF6TR M27C400-100B1TR M27C400-100B6TR M27C400-100F1TR M27C400-100F6TR M27C400-100xB1TR M27C400-100xB6TR M27C400-100xF1TR M27C400-100xF6TR M27C400-55B1TR M27C400-55B6TR M27C400-55F1TR M27C400-55F6TR M27C400-55xB1TR M27C400-55xB6TR M27C400-55xF1TR M27C400-55xF6TR M27C400-70B1TR M27C400-70B6TR M27C400-70F1TR M27C400-70F6TR M27C400-70xB1TR M27C400-70xB6TR M27C400-70xF1TR M27C400-70xF6TR M27C400-80B1TR M27C400-80B6TR M27C400-80F1TR M27C400-80F6TR M27C400-80xB1TR M27C400-80xB6TR M27C400-80xF1TR -M27C400-80xB6TR -M27C400-100xF6TR -M27C400-100F6TR
Description AML42 Series, Solid State Indicator, Square, Compact Style, Lighted, 1 LED, Snap in panel mount 4兆位512kb的x856Kb的x16紫外线存储器和OTP存储
4 Mbit 512kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512kb的x856Kb的x16紫外线存储器和OTP存储
4 Mbit (512kb x8 or 256Kb x16) UV EPROM and OTP EPROM
From old datasheet system
File Size 119.99K  /  14 Page

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    SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. M27W800-150K6TR M27W800 M27W800-100B6TR M27W800-100F6TR M27W800-100K6TR M27W800-120B6TR M27W800-120F6TR M27W800-120K6TR M27W800-150B6TR M27W800-150F6TR M27W801-100K6 M27W512-80N6TR
Description 8 Mbit (1Mb x 8 or 512kb x 16), Low Voltage UV EPROM and OTP EPROM
8 Mbit 1Mb x 8 or 512kb x 16 Low Voltage UV EPROM and OTP EPROM 8兆8512kb × 16低压紫外线存储器和OTP存储
81兆812KB × 16低压紫外线存储器和OTP存储
8 MBIT (1MB x 8 OR 512kb x 16) LOW VOLTAGE UV EPROM AND OTP EPROM
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
File Size 139.27K  /  15 Page

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Price & Availability of 512kb 32k x 16 static ram

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