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NXP Semiconductors N.V.
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| Part No. |
BUK6217-55c
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| OCR Text |
1. product profile 1.1 general description intermediate level gate drive n-channel enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified t... |
| Description |
N-channel TrenchMOS intermediate level FET
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| File Size |
190.57K /
14 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK653R5-55c
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| OCR Text |
1. product profile 1.1 general description intermediate level gate drive n-channel enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified t... |
| Description |
N-channel TrenchMOS intermediate level FET
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| File Size |
188.09K /
14 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK654R6-55c
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| OCR Text |
1. product profile 1.1 general description intermediate level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology. this product has been designed and qualified to the appropriate aec... |
| Description |
N-channel TrenchMOS intermediate level FET
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| File Size |
175.66K /
14 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK664R4-55c
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| OCR Text |
1. product profile 1.1 general description intermediate level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology. this product has been designed and qualified to the appropriate aec... |
| Description |
N-channel TrenchMOS intermediate level FET
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| File Size |
205.86K /
16 Page |
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it Online |
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Cypress Semiconductor, Corp.
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| Part No. |
CYM1420PD-55c
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| OCR Text |
&,&$3*/. 4*%&
&;.181 ((*66 ".1* 26
&;.181 4*5&7.2, 855*27 1 311*5(.&0
&;.181 !7&2)'< 855*27 1 311*5(.&0 ... |
| Description |
128K X 8 MULTI DEVICE SRAM MODULE, 55 ns, DMA32 MODULE, DIP-32
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| File Size |
468.97K /
7 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK6228-55c BUK6228-55c-15
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| OCR Text |
1. product profile 1.1 general description intermediate level gate drive n-channel enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified t... |
| Description |
N-channel TrenchMOS intermediate level FET 31 A, 55 V, 0.044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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| File Size |
185.65K /
14 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK663R5-55c
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| OCR Text |
1. product profile 1.1 general description intermediate level gate drive n-channel enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified t... |
| Description |
N-channel TrenchMOS intermediate level FET 120 A, 55 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
208.08K /
14 Page |
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it Online |
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API Technologies Corp
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| Part No. |
MN725-2500 MN725-2500.0000
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| OCR Text |
...o 1.0? x 1.0? x .2? smt ? -55c to 100c operating range ? rugged design for military applications ? phase lock loops ? local oscillators ? low noise clocks ? clock recovery operating temperature: -55c to 100c sto... |
| Description |
Voltage Controlled SAW Oscillator
Product Data Sheet Revision 100909
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| File Size |
111.53K /
4 Page |
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it Online |
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API Technologies Corp
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| Part No. |
MN725-1250.0000
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| OCR Text |
...age o 1.0 x 1.0 x .2 smt 55c to 100c operating range rugged design for military applications phase lock loop s local oscillators low noise clocks clock recovery operating temperature: 55c to 100 c storage... |
| Description |
Product Data Sheet Revision 022210
Voltage Controlled SAW Oscillator
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| File Size |
319.36K /
4 Page |
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it Online |
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