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  6a 12a Datasheet PDF File

For 6a 12a Found Datasheets File :: 2392    Search Time::1.829ms    
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    2SJ545

HITACHI[Hitachi Semiconductor]
Part No. 2SJ545
OCR Text ...0 I D = -1mA, VDS = -10V I D = -6a, VGS = -10V I D = -6a, VGS = -4V Note4 Note4 Note4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.81K  /  9 Page

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    2SJ549 2SJ549L 2SJ549S

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SJ549 2SJ549L 2SJ549S
OCR Text ...0 I D = -1mA, VDS = -10V I D = -6a, VGS = -10V I D = -6a, VGS = -4V Note4 Note4 Note4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开

File Size 54.89K  /  9 Page

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    2SK1187

SANKEN[Sanken electric]
Part No. 2SK1187
OCR Text ...25V, f = 1.0MHz, VGS = 0V I D = 6a, VDD = 50V, VGS = 10V, See Figure 2 on Page 5. 35 (Tc = 25C) * 58 150 -55 to +150 * : VDD = 25V, L = 600H, IL = 12a, unclamped, See Figure 1 on Page 5. VDS -- ID Characteristics 12 10V 1...
Description MOSFET

File Size 33.28K  /  1 Page

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    IR2104 IR2104PBF IR2104S IR2104SPBF IR2104STR

IRF[International Rectifier]
Part No. IR2104 IR2104PBF IR2104S IR2104SPBF IR2104STR
OCR Text ...AS Supply Voltage (V) Figure 6a. Turn-On Time vs Temperature Figure 6B. Turn-On Time vs Supply Voltage 1000 Max. Turn-On Delay Time...12a. Logic "1" (HO) & Logic "0" (LO) & Inactive SD Input Voltage vs Temperature 4 3.2 2.4 1.6 Max. ...
Description HALF-BRIDGE DRIVER

File Size 133.98K  /  14 Page

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    ZXMN6A09DN8 ZXMN6A09DN8TA ZXMN6A09DN8TC

ZETEX[Zetex Semiconductors]
Part No. ZXMN6a09DN8 ZXMN6a09DN8TA ZXMN6a09DN8TC
OCR Text ...6 0.95 V ns nC T J =25C, I S =6.6a, V GS =0V T J =25C, I F =3.5A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Qg Q gs Q gd 4.9 5.0 25.3 4.6 12.4...12a RDS(on) 1 T = 25 C VGS(th) VGS = V DS ID = 250uA 0.1 2 3 4 VDS = 10V 5 50 ...
Description DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 253.84K  /  8 Page

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    ZXT10N20DE6 ZXT10N20DE6TA ZXT10N20DE6TC

Diodes Incorporated
ZETEX[Zetex Semiconductors]
Part No. ZXT10N20DE6 ZXT10N20DE6TA ZXT10N20DE6TC
OCR Text ...CE =2V* I C =2A, V CE =2V* I C =6a, V CE =2V* I C =50mA, V CE =10V f=100MHz V CB =10V, f=1MHz V CC =10V, I C =3A I B1 =I B2 =10mA Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(...
Description Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
NPN Low Sat Transistor

File Size 230.01K  /  6 Page

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    ZXT10N50DE6 ZXT10N50DE6TA ZXT10N50DE6TC

ZETEX[Zetex Semiconductors]
Diodes Incorporated
Zetex Semiconductor PLC
Part No. ZXT10N50DE6 ZXT10N50DE6TA ZXT10N50DE6TC
OCR Text ...CE =2V* I C =2A, V CE =2V* I C =6a, V CE =2V* I C =50mA, V CE =10V f=100MHz V CB =10V, f=1MHz V CC =10V, I C =1A I B1 =I B2 =10mA Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(...
Description Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
NPN Low Sat Transistor
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR 50V NPN硅低饱和开关晶体管

File Size 222.72K  /  6 Page

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    IR21014 IR2102 IR21024 IR2102S IR2101

IRF[International Rectifier]
Part No. IR21014 IR2102 IR21024 IR2102S IR2101
OCR Text ...y Voltage (V) Typ. Figure 6a. Turn-On Time vs Voltage Figure 6B. Turn-On Time vs Voltage 50 0 500 Turn-Off Delay Time (ns)...12a. Logic "1" Input Voltage (IR2101) Logic "0" Input Voltage (IR2102) vs Temperature 4 3.2 In put ...
Description HIGH AND LOW SIDE DRIVER

File Size 207.86K  /  15 Page

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    IRF7205 IRF7205PBF IRF7205TR

IRF[International Rectifier]
Part No. IRF7205 IRF7205PBF IRF7205TR
OCR Text ... = -30V RDS(on) = 0.070 ID = -4.6a 3 6 4 5 T o p View Fourth Generation HEXFETs from International Rectifier utilize advan...12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit + D.U.T. - VDS I...
Description -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 162.31K  /  9 Page

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    IRF7301 IRF7301TR

IRF[International Rectifier]
Part No. IRF7301 IRF7301TR
OCR Text ... = 1mA 0.050 VGS = 4.5V, ID = 2.6a 0.070 VGS = 2.7V, ID = 2.2A --- V VDS = VGS, I D = 250A --- S VDS = 15V, ID = 2.6a 1.0 VDS = 16V, VGS ...12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit IRF7301 Peak Diode Recovery...
Description FERRITE BEAD BLM21A601S
Power MOSFET(Vdss=20V Rds(on)=0.050ohm)
Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 109.86K  /  9 Page

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