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  8 388 608-word Datasheet PDF File

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    TC58FVT641-10 TC58FVT641-70 TC58FVT641FT-70 TC58FVB641FT-10 TC58FVB641FT-70 TC58FVB641XB-10 TC58FVB641XB-70

TOSHIBA[Toshiba Semiconductor]
Part No. TC58FVT641-10 TC58FVT641-70 TC58FVT641FT-70 TC58FVB641FT-10 TC58FVB641FT-70 TC58FVB641XB-10 TC58FVB641XB-70
OCR Text 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words x 8 bits or as 4,194,304 words x 16 bits. The TC...
Description TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

File Size 590.42K  /  53 Page

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    TC58FVT641 TC58FVB641FT-10 TC58FVB641XB-70 TC58FVB641XB-10 TC58FVB641FT-70 TC58FVT641XB-70 TC58FVB641 TC58FVB641FT TC58F

TOSHIBA[Toshiba Semiconductor]
Part No. TC58FVT641 TC58FVB641FT-10 TC58FVB641XB-70 TC58FVB641XB-10 TC58FVB641FT-70 TC58FVT641XB-70 TC58FVB641 TC58FVB641FT TC58FVB641FTXB-10 TC58FVB641FTXB-70 TC58FVT641XB-10
OCR Text 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words x 8 bits or as 4,194,304 words x 16 bits. The TC...
Description 64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
64-MBIT (8M 8 BITS / 4M 16 BITS) CMOS FLASH MEMORY

File Size 586.97K  /  53 Page

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    V43728S04VCTG-10PC

Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Part No. V43728S04VCTG-10PC
OCR Text ... Features s 168 Pin Unbuffered 8,388,608 x 72 bit Oganization SDRAM ECC DIMMs s Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages s Fully PC Board Layout Compatible to INTEL'S Rev 1.0 Module Specification s Single +3.3V ( 0.3V) ...
Description 3.3 VOLT 8M x 72 HIGH PERFORMANCE PC100 UNBUFFERED ECC SDRAM MODULE

File Size 60.46K  /  11 Page

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    V43728S04VCTG-75

MOSEL[Mosel Vitelic, Corp]
Part No. V43728S04VCTG-75
OCR Text ... Features s 168 Pin Unbuffered 8,388,608 x 72 bit Oganization SDRAM ECC DIMMs s Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages s Fully PC Board Layout Compatible to INTEL'S Rev 1.0 Module Specification s Single +3.3V ( 0.3V) ...
Description 3.3 VOLT 8M x 72 HIGH PERFORMANCE PC133 UNBUFFERED ECC SDRAM MODULE

File Size 71.52K  /  12 Page

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    VG36128161A VG36128401A VG36128801A

VML[Vanguard International Semiconductor]
Part No. VG36128161A VG36128401A VG36128801A
OCR Text ...ronous Dynamic RAM organized as 8,388,608 - word x 4 -bit x 4 - bank, 4,194,304 - word x 8 - bit x 4 - bank, or 2,097,152 - word x 16 - bit x 4 - bank. These various organizations provide wide choice for different applications. It is design...
Description CMOS Synchronous Dynamic RAM

File Size 937.82K  /  69 Page

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    VG36128161BT VG36128401BT VG36128801BT

VML[Vanguard International Semiconductor]
Part No. VG36128161BT VG36128401BT VG36128801BT
OCR Text ...m-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4 and 2,097,152 x The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All input and outputs are synchronized with the positive edge o...
Description CMOS Synchronous Dynamic RAM

File Size 1,354.59K  /  68 Page

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    VG36256161A VG36256401A VG36256801A

VML[Vanguard International Semiconductor]
Part No. VG36256161A VG36256401A VG36256801A
OCR Text ...216 - word x 4 -bit x 4 - bank, 8,388,608 - word x 8 - bit x 4 - bank, or 4,194,304 - word x 16 - bit x 4 - bank. These various organizations provide wide choice for different applications. It is designed with the state-of-the-art technolog...
Description CMOS Synchronous Dynamic RAM

File Size 941.72K  /  69 Page

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    TH50VSF3582AASB TH50VSF3583AASB

TOSHIBA[Toshiba Semiconductor]
Part No. TH50VSF3582AASB TH50VSF3583AASB
OCR Text ...multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply. FLASH MEMORY a Simultaneous Read/Write operat...
Description TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

File Size 535.38K  /  50 Page

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    TH50VSF3680 TH50VSF3681AASB TH50VSF368

TOSHIBA[Toshiba Semiconductor]
Part No. TH50VSF3680 TH50VSF3681AASB TH50VSF368
OCR Text ...multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply. FLASH MEMORY a Simultaneous Read/Write operat...
Description SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE

File Size 580.07K  /  55 Page

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    MT28F008B3 MT28F800B3 MT28F008B3VG-9B MT28F008B3VG-9BET MT28F008B3VG-9T MT28F008B3VG-9TET MT28F800B3VG-9B MT28F800B3VG-9

MICRON[Micron Technology]
Part No. MT28F008B3 MT28F800B3 MT28F008B3VG-9B MT28F008B3VG-9BET MT28F008B3VG-9T MT28F008B3VG-9TET MT28F800B3VG-9B MT28F800B3VG-9BET MT28F800B3VG-9T MT28F800B3VG-9TET MT28F800B3WG-9TET MT28F008B3SG-9B MT28F008B3SG-9BET MT28F008B3SG-9T MT28F008B3SG-9TET MT28F008B3WG-9B MT28F008B3WG-9BET MT28F008B3WG-9T MT28F008B3WG-9TET MT28F800B3SG-9B MT28F800B3SG-9BET MT28F800B3SG-9T MT28F800B3SG-9TET MT28F800B3WG-9B MT28F800B3WG-9BET
OCR Text 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply (Smart 3) FEATURES * Eleven erase blo...388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing t...
Description FLASH MEMORY

File Size 392.85K  /  30 Page

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