Description |
1 Megabit (1or='#FF0000'>28 K x 8-Bit) CMOS 1or='#FF0000'>2.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 0.5MM, ZIF, SMT, 4or='#FF0000'>2 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V or='#FF0000'>20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (1or='#FF0000'>28 K x 8-Bit) CMOS 1or='#FF0000'>2.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位1or='#FF0000'>28亩8位)的CMOS 1or='#FF0000'>2.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (1or='#FF0000'>28 K x 8-Bit) CMOS 1or='#FF0000'>2.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位1or='#FF0000'>28亩8位)CMOS 1or='#FF0000'>2.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (1or='#FF0000'>28 K x 8-Bit) CMOS 1or='#FF0000'>2.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位or='#FF0000'>28亩8位)的CMOS 1or='#FF0000'>2.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (1or='#FF0000'>28 K x 8-Bit) CMOS 1or='#FF0000'>2.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1or='#FF0000'>28K X 8 FLASH 1or='#FF0000'>2V PROM, or='#FF0000'>200 ns, PQCC3or='#FF0000'>2 1 Megabit (1or='#FF0000'>28 K x 8-Bit) CMOS 1or='#FF0000'>2.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1or='#FF0000'>28K X 8 FLASH 1or='#FF0000'>2V PROM, 70 ns, PQCC3or='#FF0000'>2 1 Megabit (1or='#FF0000'>28 K x 8-Bit) CMOS 1or='#FF0000'>2.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1or='#FF0000'>28K X 8 FLASH 1or='#FF0000'>2V PROM, 1or='#FF0000'>20 ns, PDSO3or='#FF0000'>2 1 Megabit (1or='#FF0000'>28 K x 8-Bit) CMOS 1or='#FF0000'>2.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1or='#FF0000'>28K X 8 FLASH 1or='#FF0000'>2V PROM, 90 ns, PQCC3or='#FF0000'>2 1 Megabit (1or='#FF0000'>28 K x 8-Bit) CMOS 1or='#FF0000'>2.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1or='#FF0000'>28K X 8 FLASH 1or='#FF0000'>2V PROM, 150 ns, PDSO3or='#FF0000'>2 1 Megabit (1or='#FF0000'>28 K x 8-Bit) CMOS 1or='#FF0000'>2.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1or='#FF0000'>28K X 8 FLASH 1or='#FF0000'>2V PROM, 70 ns, PDSO3or='#FF0000'>2
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