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ST Microelectronics
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| Part No. |
BTA26-800a
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| OCR Text |
www.DataSheet4U.com
(R)
BTA/BTB24, BTA25, BTA26 and T25 Series
25A TRIACS
SNUBBERLESSTM & STANDARD
MAIN FEATURES:
Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 25 600 and 800 35 to 50 Unit A V mA
A1 A2 G
G
A2
A2
A1
A1 ... |
| Description |
25A Triacs
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| File Size |
142.00K /
9 Page |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
IDD09E60
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| OCR Text |
... time
V R=400V, IF=9A, di F/dt=800a/s, Tj=25C V R=400V, IF=9A, di F/dt=800a/s, Tj=125C V R=400V, IF=9A, di F/dt=800a/s, Tj=150C
Symbol min. t rr I rrm Q rr S -
Values typ. max.
Unit
ns 75 110 112 10.2 11.8 12.3 343 585 612 4 5.... |
| Description |
Silicon Power Diodes - 9A EmCon in TO252
Fast Switching EmCon Diode 快速开关快恢复二极
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| File Size |
179.43K /
8 Page |
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NIEC[Nihon Inter Electronics Corporation]
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| Part No. |
PCHMB400B12
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| OCR Text |
...A,VGE=0V IF=400A,VGE=-10V,di/dt=800a/s
Min.
-
Max.
2.4 0.30
Unit V s Unit C/W
THERMAL CHARACTERISTICS Characteristic
Thermal Impedance IGBT DIODE
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
Typ.
-
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| Description |
IGBT MODULE Chopper 400A 1200V
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| File Size |
120.01K /
3 Page |
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DYNEX[Dynex Semiconductor]
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| Part No. |
GP801FSM18
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| OCR Text |
...URES
s s s s s
Low VCE(SAT) 800a Per Switch High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 800a 1600A
External... |
| Description |
Hi-Reliability Single Switch Low VCE(SAT) IGBT Module
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| File Size |
141.33K /
10 Page |
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it Online |
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Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
GP801DDS18
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| OCR Text |
...nductance Internal Construction 800a Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 800a 1600A
APPLICATIONS
s s s s
12(C2) 2(C2) 4(E2) 1(E1) 7(C )
1
11(G2) 10(E2) 3(C1) 5(E1) 6(G1)
High Relia... |
| Description |
Dual Switch Low VCE(SAT) IGBT Module 800 A, 1800 V, N-CHANNEL IGBT
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| File Size |
142.40K /
10 Page |
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it Online |
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Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
GP801DDM18
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| OCR Text |
...URES
s s s s s
Low VCE(SAT) 800a Per Switch High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 800a 1600A
APPLICAT... |
| Description |
Hi-Reliability Dual Switch Low VCESAT IGBT Module
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| File Size |
141.87K /
10 Page |
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it Online |
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DYNEX[Dynex Semiconductor]
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| Part No. |
GP801DCS18
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| OCR Text |
...nductance Internal Construction 800a Per Module
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 800a 1600A
APPLICATIONS
s s s s s
High Reliability Inverters Motor Controllers Traction Drives Resonant Convert... |
| Description |
Chopper Switch Low VCESAT IGBT Module
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| File Size |
168.98K /
10 Page |
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it Online |
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Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
GP801DCM18
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| OCR Text |
...URES
s s s s s
Low VCE(SAT) 800a Per Module High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 800a 1600A
APPLICAT... |
| Description |
B Series/ Female Solder 800 A, 1800 V, N-CHANNEL IGBT
Hi-Reliability Chopper Switch Low VCESAT IGBT Module
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| File Size |
158.09K /
10 Page |
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it Online |
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Price and Availability
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