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IXYS
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| Part No. |
IXBN42N170A
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| OCR Text |
...4) 1.5/13 nm/lb.in. weight 30 g bimosfet tm monolithic bipolar mos transistor ixbn 42n170a e g e c minibloc, sot-227 b (ixbn) e153432 g = gate c = collector e = emitter either source terminal at minibloc can be used as main or ... |
| Description |
Discrete IGBTs
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| File Size |
87.80K /
2 Page |
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IXYS
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| Part No. |
IXBH16N170 IXBT16N170
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| OCR Text |
...bt) g e high voltage, high gain bimosfet tm monolithic bipolar mos transistor features ? high blocking voltage jedec to-268 surface and jedec to-247 ad low conduction losses high current handling capability mos gate turn-on - drive... |
| Description |
Discrete IGBTs
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| File Size |
48.93K /
2 Page |
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it Online |
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IXYS
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| Part No. |
IXBT42N170 IXBH42N170
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| OCR Text |
...ab) g e high voltage, high gain bimosfet tm monolithic bipolar mos transistor ixbh 42n170 ixbt 42n170 ixys reserves the right to change limits, test conditions, and dimensions.
? 2000 ixys all rights reserved 2 - 2 symbol test conditions... |
| Description |
Discrete IGBTs
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| File Size |
49.18K /
2 Page |
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it Online |
Download Datasheet |
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