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    BTS118D

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BTS118D
OCR Text ...cuits General Description N channel vertical power FET in Smart SIPMOS O technology. Fully protected by embedded protection functions. ...limited. IN 2not subject to production test, specified by design 3V Loaddump is setup without the DU...
Description Smart Lowside Power Switch

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    EL6295CJ EL6265C

Elantec Semiconductor
Part No. EL6295CJ EL6265C
OCR Text Channel, 60MHz, Switched Gain Pre-Amp Features * Autozero of output offset to <10mV * 13 channels with three selectable gains of 12k, 23...limited to replacement of defective components and does not cover injury to persons or property or o...
Description 13 Channel, 60MHz, Switched Gain Pre-Amp

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    ICM7211 ICM7211ALM44 ICM7211ALPL ICM7211AMLM44 ICM7211AMLPL ICM7211LPL ICM7211MLPL ICM7212 ICM7212AMLPL FN3158

Maxim Integrated Products
INTERSIL[Intersil Corporation]
Part No. ICM7211 ICM7211ALM44 ICM7211ALPL ICM7211AMLM44 ICM7211AMLPL ICM7211LPL ICM7211MLPL ICM7212 ICM7212AMLPL FN3158
OCR Text ...lled, low leakage, open-drain N-Channel outputs. These devices provide a brightness input, which may be used at normal logic levels as a dis...Limited Segment Outputs Provide 4-Digit Non-Multiplexed Direct LED Drive at >5mA Per Segment * Brigh...
Description 4-Digit, ICM7211 (LCD) and ICM7212 (LED) Display Drivers
4-Digit, ICM7211 (LCD) and ICM7212 (LED) Display Drivers
From old datasheet system

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    IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF

International Rectifier
Part No. IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF
OCR Text channel designed for bootstrap operation * * * * * * * * Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt i...limited to -VDD. 2 www.irf.com IR2110(S)/IR2113(S) & (PbF) Dynamic Electrical Characterist...
Description HIGH AND LOW SIDE DRIVER

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] ...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] ...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] ...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ...gic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRF1104 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10.54 (.415) 10.29 (.405) 3.7 8 (.149 ) 3.5 4 (.139 ) ...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Reco...limited by max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.063mH RG = 25, IAS =...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

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