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  compound field effect power tr Datasheet PDF File

For compound field effect power tr Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    RFH35N10 RFH35N08

List of Unclassifed Manufacturers
ETC[ETC]
Part No. RFH35N10 RFH35N08
Description power MOS field - effect trANSISTORS N - CHANNEL ENHANCEMENT - MODE power field - effect trANSISTORS

File Size 141.70K  /  3 Page

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    NDP6020P NDB6020P

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
Part No. NDP6020P NDB6020P
Description P-Channel Enhancement Mode field effect transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, power, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode field effect transistor

File Size 60.89K  /  6 Page

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    IRF540_D ON0285 IRF540/D IRF540-D IRF540

Motorola, Inc.
ON Semiconductor
Part No. IRF540_D ON0285 IRF540/D IRF540-D IRF540
Description 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, power, MOSFET, TO-220AB
100V7A TMOS power field effect transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门))
From old datasheet system
TMOS power FET 27 AMPERES
TMOS E-FET power field effect transistor N-Channel Enhancement-Mode Silicon Gate

File Size 139.23K  /  6 Page

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    RFP10P12 RFM10P15

GE Solid State
Part No. RFP10P12 RFM10P15
Description (RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE power field-effect trANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE power field-effect trANSISTORS

File Size 270.80K  /  4 Page

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    IRFF120 IRFF121 IRFF122 IRFF123

General Electric Solid State
GE Solid State
Part No. IRFF120 IRFF121 IRFF122 IRFF123
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE power MOS field-effect trANSISTORS

File Size 161.85K  /  5 Page

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    IRFF110 IRFF111 IRFF112 IRFF113

General Electric Solid State
GE Solid State
Part No. IRFF110 IRFF111 IRFF112 IRFF113
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
power MOS field-effect transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.

File Size 173.01K  /  5 Page

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    IRF530_D ON0283 IRF530-D IRF530/D

Motorola, Inc.
ON Semiconductor
Part No. IRF530_D ON0283 IRF530-D IRF530/D
Description 100V4A TMOS power field effect transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门))
TMOS power FET 14 AMPERES
From old datasheet system
TMOS E-FET power field effect transistor N-Channel Enhancement-Mode Silicon Gate

File Size 162.84K  /  8 Page

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    SSM5P05FU

Toshiba Semiconductor
Part No. SSM5P05FU
Description field effect transistor Silicon P Channel MOS Type power Management Switch High Speed Switching Applications
TOSHIBA field effect transistor Silicon P Channel MOS Type

File Size 132.28K  /  5 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. SSM3J02T
Description TOSHIBA field effect transistor Silicon P Channel MOS Type
field effect transistor Silicon P Channel MOS Type power Management Switch High Speed Switching Applications

File Size 135.95K  /  5 Page

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    SSM3J01T

Toshiba Semiconductor
Part No. SSM3J01T
Description field effect transistor Silicon P Channel MOS Type power Management Switch High Speed Switching Applications
TOSHIBA field effect transistor Silicon P Channel MOS Type

File Size 157.82K  /  5 Page

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For compound field effect power tr Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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