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  dmos transistors n-channel Datasheet PDF File

For dmos transistors n-channel Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    BS208

GE Security, Inc.
General Semiconductor
Part No. BS208
Description dmos transistors (P-Channel)(P通道dmos晶体

File Size 236.75K  /  5 Page

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    BS109

GE Security, Inc.
GE[General Semiconductor]
Part No. BS109
Description dmos transistors (n-channel)(N通道dmos晶体 dmos晶体管(N沟道)(不适用通道的dmos晶体管)

File Size 36.93K  /  2 Page

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    GE Security, Inc.
GE[General Semiconductor]
Part No. BS850
Description dmos transistors (P-Channel)(P通道dmos晶体 dmos晶体管(P沟道)性(P通道的dmos晶体管)

File Size 246.77K  /  5 Page

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    BS809

General Semiconductor
GE Security, Inc.
Part No. BS809
Description dmos transistors (n-channel)(N通道dmos晶体 dmos晶体管(N沟道)(不适用通道的dmos晶体管)

File Size 48.92K  /  2 Page

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    FQU6N50C FQD6N50C FQD6N50CTF FQD6N50CTM

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FQU6N50C FQD6N50C FQD6N50CTF FQD6N50CTM
Description These n-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, dmos technology
500V n-channel Advance Q-FET C-Series

File Size 684.34K  /  9 Page

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    2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z

NEC[NEC]
Part No. 2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z
Description n-channel enhancement type dmos
MOS Field Effect transistors
SWITCHING n-channel POWER MOS FET INDUSTRIAL USE

File Size 112.83K  /  8 Page

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    FDPF10N60NZ

Fairchild Semiconductor
Part No. FDPF10N60NZ
Description These n-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, dmos technology.

File Size 426.21K  /  10 Page

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    ACE632

ACE Technology Co., LTD.
Part No. ACE632
Description The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, dmos trench technology.

File Size 947.24K  /  11 Page

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    STP9235

Stanson Technology
Part No. STP9235
Description STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, dmos trench technology.

File Size 326.22K  /  6 Page

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    STN4488L

Stanson Technology
Part No. STN4488L
Description STN4488L is the n-channel logic enhancement mode power field effect transistors which are produced using high cell density dmos trench technology.

File Size 634.35K  /  7 Page

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