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  fast 60v high side nmos static Datasheet PDF File

For fast 60v high side nmos static Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    NEC TOKIN, Corp.
Part No. UPD424800G5-10-7JD UPD424800G5-10-7KD UPD424800V-80 UPD424800V-10 UPD424800V-70 UPD42S4800V-10 UPD42S4800G5-10-7JD UPD42S4800G5-10-7KD UPD424800G5-70-7KD UPD42S4800G5-80-7JD UPD42S4800G5-80-7KD UPD424800G5-80-7KD UPD42S4800V-80
Description 256K (32K x 8) static RAM
8K x 8 static RAM
RoboClock® high-speed Multi-phase PLL Clock Buffer
x8 fast Page Mode DRAM x8快速页面模式的DRAM

File Size 535.62K  /  23 Page

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    BUK212-50Y BUK212_217_50Y-01 BUK217-50Y

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BUK212-50Y BUK212_217_50Y-01 BUK217-50Y
Description BUK212-50Y; BUK217-50Y; Single channel high-side TOPFET(tm)
Single channel high-side TOPFET⑩
From old datasheet system
Single channel high-side TOPFET TM
Single channel high-side TOPFET垄芒
Single channel high-side TOPFET?/a>
25 A BUF OR INV BASED PRPHL DRVR, PSSO4
Single channel high-side TOPFET??/span>

File Size 98.78K  /  16 Page

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    NTE[NTE Electronics]
Part No. NTE2102
Description Integrated Circuit nmos, 1K static RAM (SRAM), 350ns
Integrated Circuit nmos / 1K static RAM (SRAM) / 350ns

File Size 27.95K  /  3 Page

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    Elpida Memory, Inc.
EPCOS AG
STMicroelectronics N.V.
NEC, Corp.

Part No. UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 UPD4265400G5-A80 UPD4265400LE-A50 UPD4265400LE-A60 UPD4265400LE-A70 UPD4265400LE-A80 UPD4264400LE-A80 UPD4264400LE-A50 UPD4264400LE-A70 UPD4264400LE-A60 UPD4264400G5-A70 UPD4264400G5-A80 UPD4264400G5-A50
Description 2M x 8 static RAM
256K x 4 static RAM x4快速页面模式的DRAM
512K x 32 static RAM x4快速页面模式的DRAM
3.3V 16K/32K x 36 FLEx36&#153; Synchronous Dual-Port static RAM x4快速页面模式的DRAM
x4 fast Page Mode DRAM x4快速页面模式的DRAM
512K x 24 static RAM x4快速页面模式的DRAM
2-Mbit (128K x 16) static RAM x4快速页面模式的DRAM
128K x 8 static RAM 128K的8静态RAM
x4fastPageModeDRAM

File Size 488.69K  /  24 Page

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    SAE81C52 SAE81C52G SAE81C52P

Siemens Semiconductor Group
Part No. SAE81C52 SAE81C52G SAE81C52P
Description From old datasheet system
256 x 8-Bit static CMOS RAM nmos-Compatible

File Size 284.73K  /  10 Page

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    TLD1313EL TLD1313EL-15

Infineon Technologies AG
Marl International Limi...
Infineon Technologies A...
Part No. TLD1313EL TLD1313EL-15
Description 3 Channel high side Current Source Basic LED Driver
Smart low side and high side switches

File Size 1,510.67K  /  31 Page

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    TLD1314EL TLD1314EL-15

Infineon Technologies AG
Infineon Technologies A...
Marl International Limi...
Part No. TLD1314EL TLD1314EL-15
Description 3 Channel high side Current Source Basic LED Driver
Smart low side and high side switches

File Size 1,577.59K  /  29 Page

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    Integrated Device Techn...
Integrated Device Technology, Inc.
http://
Part No. IDT7007L55G IDT7007L55GB IDT7007L55GI IDT7007L15J IDT7007L15JB IDT7007L15PFI IDT7007L35PFI IDT7007S15PFI IDT7007L25JB IDT7007L25PF IDT7007L20PFB IDT7007L25GI IDT7007L35GI IDT7007L20JB IDT7007L15G IDT7007L25JI IDT7007L35GB IDT7007L15GI
Description    high-SPEED 32K x 8 DUAL-PORT static RAM
LCD BACKLIGHT INVERTER DRIVE IC; Package: SOIC-Wide; No of Pins: 20; Container: Tape & Reel
high side Gate Driver; Package: SOIC; No of Pins: 8; Container: Rail
ER 19C 19#12 PIN RECP
ER 3C 3#16S PIN RECP THRMO
ER 6C 6#16S SKT RECP 高2K的8双端口静态RAM
high-SPEED 32K x 8 DUAL-PORT static RAM 32K X 8 DUAL-PORT SRAM, 35 ns, PQFP80
high-SPEED 32K x 8 DUAL-PORT static RAM 高2K的8双端口静态RAM
high-SPEED 32K x 8 DUAL-PORT static RAM 32K X 8 DUAL-PORT SRAM, 25 ns, PQCC68
high-SPEED 32K x 8 DUAL-PORT static RAM 32K X 8 DUAL-PORT SRAM, 25 ns, PQFP80

File Size 260.08K  /  21 Page

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    IR21834

International Rectifier
Part No. IR21834
Description high and Low side Driver, SoftTurn-On, Low side Inverting Inputs, Separate high and Low side Inputs, All high Voltage Pins On One side, Separate Logic and Power Ground, Programmable Deadtime in a 14-pin DIP package

File Size 181.26K  /  8 Page

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    K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C1C-C15 K6R1008C1C-I10 K6R1008C1C-I12 K6R1008C1C-I15 K6R1008C1C-J10 K6R

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C1C-C15 K6R1008C1C-I10 K6R1008C1C-I12 K6R1008C1C-I15 K6R1008C1C-J10 K6R1008C1C-J12 K6R1008C1C-J15 K6R1008C1C-T10 K6R1008C1C-T12 K6R1008C1C-T15 K6R1008C1C-P15 K6R1008C1C-L10 K6R1008C1C-L12 K6R1008C1C-L15 K6R1008C1C-P10 K6R1008C1C-P12 K6R1008C1C-JC15 K6R1008C1C-JI12 K6R1008C1C-JI10 K6R1008C1C-JC12
Description 128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit high-Speed CMOS static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns

File Size 130.06K  /  9 Page

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