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  high-frequency high-power low- Datasheet PDF File

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    CREE POWER
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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    SANYO[Sanyo Semicon Device]
Part No. 2SC4854 2SC4854-5 2SC4854-4
Description 晶体管|晶体管|叩| 6V的五(巴西)总裁| 15mA的一c)|36AB
SC70/µDFN, Single/Dual low-Voltage, low-Power µP Reset Circuits
low-Voltage low-Current high-frequency Amp Applications
low-Voltage, low-Current high-frequency Amp Applications

File Size 109.75K  /  4 Page

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    2SC1722

List of Unclassifed Manufacturers
ETC[ETC]
Part No. 2SC1722
Description LOW FREQUENCY HIGH VOLTAHE POWER AMPLIFIER TV POWER SUPPLY DRIVER
LOW FREQUENCY POWER AMPLIFIER TV HORIZONTAL/VERTICAL DRIV

File Size 51.42K  /  1 Page

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    2SC3355 2SC3355-T

NEC[NEC]
Part No. 2SC3355 2SC3355-T
Description For amplify low noise and high frequency
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

File Size 100.42K  /  8 Page

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    2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD

UTC
ROHM[Rohm]
Part No. 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD2114K1 2SD26721 2SK20941 2SK25031 2SK25041 2SK27151 2SK30181 2SK30191 2SK30501 2SK35411 4N60-TA3-T 4N60-TF3-T 4N60L-TA3-T
Description -3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
high-frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET

File Size 93.04K  /  3 Page

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    FD1000FH-56

Mitsubishi Electric Semiconductor
Part No. FD1000FH-56
Description 1000 A, 2800 V, SILICON, RECTIFIER DIODE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE

File Size 40.35K  /  3 Page

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    MAX1708 MAX1708EEE

MAXIM[Maxim Integrated Products]
Part No. MAX1708 MAX1708EEE
Description high-frequency high-power low-Noise Step-Up DC-DC Converter
"high-frequency, high-power, low-Noise, Step- Up DC-DC Converter"
high-frequency, high-power, low-Noise, Step-Up DC-DC Converter

File Size 329.54K  /  13 Page

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    MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D-F MC08CA100D-F MC12ED240J-F MC12CF070D-F MC08FA560J-F MC12FF500J-F MC1

Cornell Dubilier Electronics, Inc.
http://
Cornell Dubilier Electronic...
Cornell Dubilier Electr...
Part No. MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D-F MC08CA100D-F MC12ED240J-F MC12CF070D-F MC08FA560J-F MC12FF500J-F MC12FF330J-F MC22FF331J-F MC22FF620J-F MC22FF750J-F MC22FF391J-F MC12FA331J-F MC18FA331J-F MC18FD331J-F MC12ED220J-F MC22FF251J-F MC08FA910J-F MC12FA910J-F MC22FA911J-F MC12FD131J-F MC12CF040D-F MC12FA201J-F MC18FD161J-F MC08EA200J-F MC12FF360J-F MC12FF430J-F MC08FA330J-F MC12FA161J-F MC22FF161J-F MC12CD100D-F MC22FA102J-F MC22FA202J-F MC22FA152J-F MC22FF152J-F MC12FD330J-F MC08FA101J-F MC12FA101J-F MC22FA222J-F MC12FA251J-F MC18FA251J-F MC12FA431J-F MC12FD430J-F MC12CF100D-F MC18FD201J-F MC22FF201J-F MC08CD020D-F MC22FA182J-F MC12FD151J-F MC22FF151J-F MC12FA151J-F MC18FD251J-F MC08EA240J-F MC08EA120J-F MC12FA111J-F MC18FD301J-F MC22FF510J-F MC12FD560J-F MC22FD561J-F MC12FD470J-F MC18FA561J-F MC18FA431J-F MC18FD431J-F MC22FF431J-F MC12CF080D-F MC12ED150J-F MC08FA390J-F MC22FF301J-F MC12FA391J-F MC18FA391J-F MC18FD391J-F MC12CF090D-F MC18FD181J-F MC18FA271J-F MC18FA471J-F MC12FA271J-F MC22FF471J-F MC18FD471J-F MC08CD100D-F MC08FA470J-F MC12FA470J-F MC22FF501J-F MC22FF121J-F MC22FF122J-F MC22FF560J-F MC12FD360J-F MC22FF561J-F MC12FA181J-F MC18FA681J-F MC12CF060D-F MC12
Description Multilayer RF Capacitors high-frequency, high-power, High-Voltage Chips with Nonmagnetic Option

File Size 426.42K  /  9 Page

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    2SC5434 2SC5434-T1

NEC[NEC]
NEC Corp.
Part No. 2SC5434 2SC5434-T1
Description Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR high-frequency low-NOISE AMPLIFICATION
High-Frequecy low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体

File Size 59.68K  /  8 Page

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    2SC1622 2SC1622A 2SC1622A-T2B 2SC1622A-L 2SC1622A-T1B

NEC[NEC]
Part No. 2SC1622 2SC1622A 2SC1622A-T2B 2SC1622A-L 2SC1622A-T1B
Description low-frequency high-gain amplification silicon Tr.
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

File Size 232.84K  /  4 Page

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For high-frequency high-power low- Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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