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  ic-hbt Datasheet PDF File

For ic-hbt Found Datasheets File :: 640    Search Time::2.109ms    
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    SGA-9289

Stanford Microdevices
Part No. SGA-9289
OCR Text ... Junction Temperature Symbol IB IC V C EO V C BO V EBO TOP Tstor TJ Value 20 400 7.0 18 4.8 -40 to +85 -40 to +150 +150 Unit mA mA V V V C C...HBT amplifiers are subject to device current variation due to the decreasing nature of the internal ...
Description Silicon Germanium HBT Amplifier

File Size 159.08K  /  10 Page

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    RFMD[RF Micro Devices]
Part No. RF5163PCBA-WD RF5163 RF5163L RF5163PCBA-41X
OCR Text ...ower, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF am...
Description 3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER

File Size 506.88K  /  12 Page

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    LX5510 LX5510-LQ LX5510-LQT

MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
MICROSEMI[Microsemi Corporation]
Part No. LX5510 LX5510-LQ LX5510-LQT
OCR Text ...nction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 3.3V 20dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA. For +19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (E...
Description 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
InGaP HBT 2.4-2.5 GHz Power Amplifier

File Size 621.56K  /  7 Page

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    TRIQUINT[TriQuint Semiconductor]
Part No. TQHBT3
OCR Text ...00uA, step size=67uA 0.06 Ic (A ) 0.04 0.02 0 0 2 4 6 8 Vce (V) Ft, Fmax vs Ic @Vce=3.5V Frequency (GHz) 80 70 60 50 40 30 ...HBT Foundry Service TQHBT3 Gain at 6.1 GHz Versus Current Density 25 23 21 19 Gain (dB) ...
Description InGaP HBT Foundry Service

File Size 116.93K  /  6 Page

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    SIW1721BFIGSB SIW1721BFIGSR SIW1721BFIG-TR13 SIW1721BFIG-T13 SIW1721B SIW1721BFIG

RF Micro Devices
Part No. SIW1721BFIGSB SIW1721BFIGSR SIW1721BFIG-TR13 SIW1721BFIG-T13 SIW1721B SIW1721BFIG
OCR Text ...ontrol and interface logic. The IC also incorporates analog and digital voltage regulators and a reference Phase Lock Loop (PLL) capable of ...HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS RF Micro Devices, Inc. 7628 Thorndi...
Description BLUETOOTH? RADIO MODEM
BLUETOOTH㈢ RADIO MODEM

File Size 347.66K  /  12 Page

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    RF2362PCBA-41X RF23621

RF Micro Devices
Part No. RF2362PCBA-41X RF23621
OCR Text ...t noise power is a concern. The IC includes a power down feature that can be used to completely turn off the device. The IC is featured in a...HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MI...
Description PCS CDMA/TDMA 3V PA DRIVER AMPLIFIER

File Size 197.59K  /  10 Page

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    RF23731

RF Micro Devices
Part No. RF23731
OCR Text .... When used as a PA driver, the IC can operate directly from a single cell Li-ion battery and includes a power down feature that can be used...HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MI...
Description 3V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER

File Size 216.71K  /  12 Page

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    MGFS36E2325 MGFS36E232510

Mitsubishi Electric Semiconductor
Part No. MGFS36E2325 MGFS36E232510
OCR Text IC Outline Drawing DESCRIPTION MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE. 4.5 1.0 FEATURES * * * * * * * * * InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector...
Description 2.3-2.5GHz HBT HYBRID IC

File Size 65.44K  /  6 Page

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    MGFS36E2527 MGFS36E252707

Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
Part No. MGFS36E2527 MGFS36E252707
OCR Text IC Outline Drawing DESCRIPTION MGFS36E2527 is GaAs RF amplifier designed for WiMAX CPE. 4.5 1.0 FEATURES * * * * * * * * * InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector I...
Description 2.5-2.7GHz HBT HYBRID IC

File Size 70.91K  /  7 Page

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