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irradiated Datasheet PDF File

For irradiated Found Datasheets File :: 309 Search Time::1.844ms
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				International Rectifier, Corp.
Part No.	JANSH2N7269U
OCR Text	...- diation limits of the devices irradiated to 1 x 10 5 rads (si) are identical and are presented in table 1, col- umn 1, irhn7250. post-irradiation limits of the de- vices irradiated to 1 x 10 6 rads (si) are presented in table 1, column ...
Description	HEXFET Transistor(HEXFET 晶体的HEXFET晶体管（之HEXFET晶体管）
File Size	276.10K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM8360 IRHM7360
OCR Text	...radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHM7360. Post-irradiation limits of the devices irradiated to 1 x 106 Rads (Si) are presented in IRHM7360, IRHM8360 De...
Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET? TRANSISTOR
File Size	318.57K / 12 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	JANSH2N7261
OCR Text	...- diation limits of the devices irradiated to 1 x 10 5 rads (si) are identical and are presented in table 1, col- umn 1, irhf7130. post-irradiation limits of the devices irradiated to 1 x 10 6 rads (si) are presented in table 1, column 2,...
Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 重复性雪崩和DV /受好评的HEXFET晶体管胸
File Size	292.24K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRH7450
OCR Text	...- diation limits of the devices irradiated to 1 x 10 5 rads (si) are identical and are presented in table 1, col- umn 1, irh7450. post-irradiation limits of the devices irradiated to 1 x 10 6 rads (si) are presented in table 1, column 2, ...
Description	(IRH7450 / IRH8450) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
File Size	324.59K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	JANSH2N7262
OCR Text	...- diation limits of the devices irradiated to 1 x 10 5 rads (si) are identical and are presented in table 1, col- umn 1, irhf7230. post-irradiation limits of the devices irradiated to 1 x 10 6 rads (si) are presented in table 1, column 2,...
Description	Quadruple 2-Input Exclusive-OR Gates 14-TSSOP -40 to 85
File Size	303.37K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	JANSR2N7424
OCR Text	...- diation limits of the devices irradiated to 1 x 10 5 rads (si) are identical and are presented in table 1, col- umn 1, irhm9064. post-irradiation limits of devices irradiated to 3 x 10 5 rads(si) are presented in table 1, column 2, i...
Description	HEXFET Transistor(HEXFET 晶体
File Size	117.46K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	JANSF2N7424U JANSR2N7424U
OCR Text	...diation limits of the de- vices irradiated to 1 x 10 5 rads (si) are identical and are presented in table1,column1, irhna9064.post-ir- radiation limits of the devices irradiated to 3 x 10 5 rads (si) are presented in table 1, column 2, ir...
Description	HEXFET Transistor(HEXFET 晶体
File Size	133.04K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHNB7Z60 IRHNB8Z60
OCR Text	...s diation limits of the devices irradiated to 1 x 105 Rads have been characterized in heavy ion Single Event (Si) are identical and are presented in Table 1, col- Effects (SEE) environments. Single Event Effects charumn 1, IRHNB7Z60. Post-i...
Description	30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗辐射N沟道HEXFET晶体
File Size	110.79K / 8 Page	View it Online	Download Datasheet

For irradiated Found Datasheets File :: 309 Search Time::1.844ms
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