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MICROSEMI[Microsemi Corporation]
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Part No. |
LX5514LL LX5514
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OCR Text |
...ar Transistor (HBT) IC process (mocvd). Power gain of 28dB is obtained with a low quiescent current of 80mA.
For 20dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 150mA tota... |
Description |
InGaP HBT 2.3 - 2.5 GHz Power Amplifier
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File Size |
87.22K /
2 Page |
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it Online |
Download Datasheet
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MICROSEMI[Microsemi Corporation]
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Part No. |
LX5530LQ LX5530
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OCR Text |
...ar Transistor (HBT) IC process (mocvd). It operates with a single positive voltage supply of 3 - 5V, with high power gain of up to 33dB. When operated at 5V supply voltage, it provides up to +25dBm linear output power for 802.11a OFDM spect... |
Description |
InGaP HBT 4.5 - 6.0GHz Power Amplifier
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File Size |
90.71K /
2 Page |
View
it Online |
Download Datasheet
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Price and Availability
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