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  NE4210S01-T1B Datasheet PDF File

For NE4210S01-T1B Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    2SJ204-T1B

NEC
Part No. 2SJ204-T1B
Description MOS field effect transistor

File Size 326.03K  /  7 Page

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HUA FENG CIRCUIT





    2SB624-T1B

NEC
Part No. 2SB624-T1B
Description Silicon transistor

File Size 261.52K  /  5 Page

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    N0300N-T1B-AT

Renesas Electronics Corporation
Part No. N0300N-T1B-AT
Description MOS FIELD EFFECT TRANSISTOR

File Size 248.43K  /  8 Page

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    2SJ624-T1B-A

Renesas Electronics Corporation
Part No. 2SJ624-T1B-A
Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 197.51K  /  10 Page

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    FN1F4N FN1F4N-L FN1F4N-T1B FN1F4N-T2B

NEC Corp.
Part No. FN1F4N FN1F4N-L FN1F4N-T1B FN1F4N-T2B
Description MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD
Compound transistor

File Size 178.42K  /  4 Page

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    FN1L3M FN1L3M-T2B FN1L3M-L FN1L3M-T1B

NEC
Part No. FN1L3M FN1L3M-T2B FN1L3M-L FN1L3M-T1B
Description Compound transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD

File Size 163.62K  /  4 Page

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    NEC Corp.
Part No. FA1A3Q FA1A3Q-T1B FA1A3Q-T2B FA1A3Q-L
Description Compound transistor
SILICON TRANSISTOR

File Size 159.89K  /  4 Page

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    2SJ203 2SJ203-T1B 2SJ203-T2B 2SJ203-L

NEC, Corp.
Part No. 2SJ203 2SJ203-T1B 2SJ203-T2B 2SJ203-L
Description MOS FIELD EFFECT TRANSISTOR MOS场效应管
P-channel MOS FET

File Size 240.53K  /  8 Page

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    NEC Corp.
NEC[NEC]
Part No. 2SJ621 2SJ621-T2B 2SJ621-T1B
Description RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET

File Size 71.11K  /  8 Page

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    NEC, Corp.
NEC[NEC]
Part No. 2SJ624 2SJ624-T1B 2SJ624-T2B
Description Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET

File Size 69.46K  /  8 Page

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Part: NE4210S01-T1B
Maker: NEC
Pack: 渡金十字架
Stock: Reserved
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