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  p channel mos type dc-dc conve Datasheet PDF File

For p channel mos type dc-dc conve Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    HN1L02FU E001983

TOSHIBA[Toshiba Semiconductor]
Part No. HN1L02FU E001983
Description N channel mos TYpE/ p channel mos TYpE (HIGH SpEED SWITCHING/ ANALOG SWITCH AppLICATIONS)
N channel mos TYpE, p channel mos TYpE (HIGH SpEED SWITCHING, ANALOG SWITCH AppLICATIONS)
From old datasheet system

File Size 332.29K  /  6 Page

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    TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Part No. SSM3J02F
Description 600 mA, 30 V, p-channel, Si, SMALL SIGNAL, mosFET, TO-236
Field Effect Transistor Silicon p channel mos Type power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon p channel mos Type

File Size 152.94K  /  5 Page

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    UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A

NEC
Part No. UpA675T UpA675T-T1 UpA675T-T2 UpA675T-A
Description 100 mA, 16 V, 2 channel, N-channel, Si, SMALL SIGNAL, mosFET
N-channel mos FIELD EFFECT TRANSISTOR FOR HIGH SpEED SWITCHING
N-channel enhancement type mos FET

File Size 47.21K  /  8 Page

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    2SK710 E001574 SK710

TOSHIBA[Toshiba Semiconductor]
Part No. 2SK710 E001574 SK710
Description N channel JUNCTION TYpE (HIGH, AM HIGH, AUDIO FREQUENCY AMpLIFIER AppLICATIONS)
SILICON N channel JUNCTION TYpE
From old datasheet system

File Size 187.36K  /  3 Page

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    Matsushita Electric Works(Nais)
Part No. AQW224NA
Description photomos relay, FR (radio frequency) type, [2-channel (form A) type] low on resistance. AC/DC type. Output rating: load voltage 400 V, load current 40 mA. surface-mount terminal, tube packing style.

File Size 46.43K  /  3 Page

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    AQY210EH AQY210EHA AQY214EHA AQY214EHAZ AQY210EHAX AQY210EHAZ AQY214EH AQY214EHAX

Matsushita Electric Works(Nais)
NAIS[Nais(Matsushita Electric Works)]
Part No. AQY210EH AQY210EHA AQY214EHA AQY214EHAZ AQY210EHAX AQY210EHAZ AQY214EH AQY214EHAX
Description photomos relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA.
photomos relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA.
GU (General Use)-E Type 1-channel (Form A) 4-pin Type

File Size 39.60K  /  3 Page

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    2SJ327 2SJ327-Z 2SJ327-Z-T1 2SJ327-Z-E2 2SJ327-Z-T2 2SJ327JM

NEC Corp.
NEC[NEC]
Part No. 2SJ327 2SJ327-Z 2SJ327-Z-T1 2SJ327-Z-E2 2SJ327-Z-T2 2SJ327JM
Description Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0620-4 00; No. of positions: 6; Connector Type: panel
SWITCHING p-channel pOWER mos FET INDUSTRIAL USE
p-channel enhancement type

File Size 344.23K  /  6 Page

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    SSM3K01T

Toshiba Semiconductor
Part No. SSM3K01T
Description 3200 mA, 30 V, N-channel, Si, SMALL SIGNAL, mosFET
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N channel mos TYpE
Field Effect Transistor Silicon N channel mos Type High Speed Switching Applications

File Size 151.35K  /  5 Page

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    2SJ325 2SJ325-Z-E2 2SJ325-Z-E2JM 2SJ325-Z-T1 2SJ325-Z-T2 2SJ325-Z 2SJ325JM

NEC Corp.
Part No. 2SJ325 2SJ325-Z-E2 2SJ325-Z-E2JM 2SJ325-Z-T1 2SJ325-Z-T2 2SJ325-Z 2SJ325JM
Description p-channel enhancement type
SWITCHING p-channel pOWER mos FET INDUSTRIAL USE
TRANSISTOR | mosFET | p-channel | 30V V(BR)DSS | 4A I(D) | TO-252VAR

File Size 383.49K  /  6 Page

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    Matsushita Electric Works(Nais)
Part No. AQV414AX
Description photomos relay, GU (general use) type [1-channel (form B) type]. AC/DC type. I/O isolation: 1.500 V AC. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal, tape and reel packing style, picked from the 1/2/3-pin

File Size 51.13K  /  3 Page

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