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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT40G121
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Description |
Insulated Gate Bipolar transistor silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate Bipolar transistor silicon N Channel IGBT
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File Size |
139.45K /
5 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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Part No. |
BFS17W BFS17W.
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Description |
rf-bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA rf-bipolar npn Type transistors with transition frequency from 1 to 6 GHz npn silicon rf transistor
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File Size |
44.03K /
5 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT15M321
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Description |
INSULATED GATE BIPOLAR trANSISTOR silicon N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA INSULATED GATE BIPOLAR trANSISTOR silicon N CHANNEL IGBT
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File Size |
257.03K /
6 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT15Q311
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Description |
INSULATED GATE BIPOLAR trANSISTOR silicon N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONtrOL APPLICATIONS TOSHIBA Insulated Gate Bipolar transistor silicon N Channel IGBT
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File Size |
167.37K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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