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For self-identification Found Datasheets File :: 2978 Search Time::1.875ms
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				STMicroelectronics
Part No.	TDA9109A
OCR Text	...Current Limitation Horizontal s Self-adaptative s Dual PLL concept s 150kHz maximum frequency s X-ray protection input 2 s I C controls: Hor...Identification Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description	LOW-COST I2C CONTROLLED DEFLECTION PROCESSOR FOR MULTISYNC MONITOR
File Size	506.69K / 47 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	TDA9109N 5844
OCR Text	.... . . . . . . . . HORIZONTAL SELF-ADAPTATIVE DUAL PLL CONCEPT 150kHz MAXIMUM FREQUENCY X-RAY PROTECTION INPUT I2C CONTROLS : H-POSITION, ...Identification (on both Horizontal 1st PLL and Vertical Section) I2C Control for H-Position XRAY Pro...
Description	LOW-COST DEFLECTION PROCESSOR FOR MULTISYNC MONITORS From old datasheet system
File Size	301.20K / 32 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	TDA9109SN TDA9109 5969
OCR Text	.... . . . . . . . . HORIZONTAL SELF-ADAPTATIVE DUAL PLL CONCEPT 150kHz MAXIMUM FREQUENCY X-RAY PROTECTION INPUT I2C CONTROLS : H-POSITION, ...Identification (on both Horizontal 1st PLL and Vertical Section) I2C Control for H-Position XRAY Pro...
Description	LOW-COST DEFLECTION PROCESSOR FOR MULTISYNC MONITORS From old datasheet system
File Size	264.31K / 30 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	TDA9109 TDA9109S 5961
OCR Text	.... . . . . . . . . HORIZONTAL SELF-ADAPTATIVE DUAL PLL CONCEPT 150kHz MAXIMUM FREQUENCY X-RAY PROTECTION INPUT I2C CONTROLS : HORIZONTAL D...Identification (on both Horizontal 1st PLL and Vertical Section) I2C Control for H-Position XRAY Pro...
Description	LOW-COST DEFLECTION PROCESSOR FOR MULTISYNC MONITORS From old datasheet system
File Size	293.97K / 30 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text	...resh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 EDO DRAM family is fabricated using Samsungs adv...Identification - K4E170411D-B(F) (5V, 4K Ref.) - K4E160411D-B(F) (5V, 2K Ref.) - K4E170412D-B(F) (3....
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	...resh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 Fast Page Mode DRAM family is fabricated using S...Identification - K4F170411D-B(F) (5V, 4K Ref.) - K4F160411D-B(F) (5V, 2K Ref.) - K4F170412D-B(F) (3....
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	M93C66 M93C66BN M93C66DS M93C66DW M93C66MN M93C66-R M93C66-W M9306-TDS6T M9346-TDS6T M9356-TDS6T M9366-TDS6T M9376-TDS6T M9386-TDS6T M93C76 M93C76BN M93C76DS M93C76DW M93C76MN M93C76-R M93C76-W M93C46-MB M93C56-MB M93C56MN M93C06 M93C06BN M93C06DS M93C06DW M93C06MN M93C46 M93C46BN M93C46DS M93C46DW M93C46MN M9346-TBN3T M9346-TBN6T M9346-TDS3T M9346-TDW3T M9346-TDW6T M9346-TMN3T M9346-TMN6T M9346-TRBN3T M9346-TRBN6T M9346-TRDS3T M9346-TRDS6T M9346-TRDW3T M9346-TRDW6T M9346-TRMN3T M93C46-BN M93C46-WDW M93C86-W M93C86-WMN6 M93C56-W M93C56 M93C86 M93C46-WMN6 M93C46-MN6 M93C46-WDW6 M93C56-BN6 M93C46-MN3 M93C46-MN7 93C56 M9376-BN3T M9376-BN6T M9376-DS3T M9376-DS6T M9376-DW3T M9376-DW6T M9376-MN3T M9376-MN6T M9376-RBN3T M9376-RBN6T M9376-RDS3T M9376-RDS6T M9376-RDW3T M9376-RDW6T M9376-RMN3T M9376-RMN6T M9376-TBN3T M9376-TBN6T M9376-TDS3T M9376-TDW3T M9376-TDW6T M9376-TMN3T M9376-TMN6T M9376-TRBN3T M9376-TRBN6T M9376-TRDS3T M9376-TRDS6T M9376-TRDW3T M9376-TRDW6T M9386-BN3T M9386-BN6T M9386-DS3T M9386-DS6T M9386-DW3T M9386-DW6T M9386-MN3T M9386-MN6T M9386-RBN3T M9386-RBN6T M9386-RDS3T M9386-RDS6T M9386-RDW3T M9386-RDW6T M9386-RMN3T M9386-RMN6T M9386-TBN3T M9386-TBN6T M9386-TDS3T M9386-TDW3T
OCR Text	...on: Byte, Word or Entire Memory Self-timed Programming Cycle with AutoErase Ready/Busy Signal During Programming Speed: - 1MHz Clock Rate, 10ms Write Time (Current product, identified by process identification letter F or M) - 2MHz Clock Ra...
Description	16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM 16Kbit 8Kbit 4Kbit 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide
File Size	256.40K / 31 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text	...resh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using ...Identification - K4F171611D-J(T) (5V, 4K Ref.) - K4F151611D-J(T) (5V, 1K Ref.) - K4F171612D-J(T) (3....
Description	1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
File Size	525.70K / 34 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text	...refresh) RAS pulse width (C-B-R self refresh) RAS precharge time (C-B-R self refresh) CAS hold time (C-B-R self refresh) Symbol Min -45 Max 64 64 0 32 67 43 48 5 10 5 26 31 70 9 45 28 12 12 0 12 10 15 10 10 100 80 -50 13 13 0 13 10 15 10 10...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
File Size	826.10K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text	...refresh) RAS pulse width (C-B-R self refresh) RAS precharge time (C-B-R self refresh) CAS hold time (C-B-R self refresh) Symbol Min -5 Max 64 64 0 36 73 48 53 5 10 5 30 35 76 10 50 30 13 13 0 13 10 15 10 10 100 90 -50 13 13 0 15 10 15 10 10...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
File Size	898.34K / 35 Page	View it Online	Download Datasheet

For self-identification Found Datasheets File :: 2978 Search Time::1.875ms
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