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    TEA1501

NXP Semiconductors
Philips Semiconductors
Part No. TEA1501
OCR Text ...ed high voltage startup current source for a fast startup within 0.25 s integrated power switch: 650 v, 40 w , 0.25 a programmable primary peak current data transfer from isolated secondary side to non-isolated primary side via the trans...
Description Greeny; GreenChip(GreenChip系列芯片)

File Size 120.48K  /  20 Page

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    Hitachi,Ltd.
Part No. 2SK1910
OCR Text ...e device can be driven from 5 v source suitable for switching regulator, dc - dc converter avalanche ratings outline 1 2 3 to-220ab...current i d 25 a drain peak current i d(pulse) * 1 100 a body to drain diode reverse drain current i...
Description Silicon N-Channel MOS FET(N沟道MOSFET)

File Size 64.96K  /  9 Page

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    Hitachi,Ltd.
Part No. 2SK2115
OCR Text ...to-220cfm 1. gate 2. drain 3. source d g s 2sk2114, 2sk2115 2 ordering information type no. v dss 2sk2114 450 v 2sk2115 500 v absolute m...current i d 5a drain peak current i d(pulse) * 1 20 a body to drain diode reverse drain current i dr...
Description Silicon N-Channel MOS FET(N沟道MOSFET)

File Size 34.24K  /  5 Page

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    Hitachi,Ltd.
Part No. 2SK2121
OCR Text ...e device can be driven from 5 v source suitable for switching regulator, dc-dc converter avalanche ratings outline 1 2 3 to-3p 1. gate...current i d 50 a drain peak current i d(pulse) * 1 200 a body to drain diode reverse drain current i...
Description Silicon N-Channel MOS FET(N沟道MOSFET)
Silicon N-Channel MOS FET(N娌??MOSFET)

File Size 65.68K  /  9 Page

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    Hitachi,Ltd.
Part No. 2SK2322L 2SK2322S
OCR Text ...e device can be driven from 3 v source suitable for switching regulator, dc-dc converter avalanche ratings outline 3 2 1 4 3 2 1 4 ldp...current i d 15 a drain peak current i d(pulse) * 1 60 a body to drain diode reverse drain current i ...
Description Silicon N-Channel MOS FET(N沟道MOSFET) 硅N沟道场效应晶体管(不适用沟道MOSFET的)

File Size 67.90K  /  9 Page

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    SID957511

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnologie...
Part No. SID957511
OCR Text ...r symbol ratings unit drain-source voltage v ds -60 v gate-source voltage v gs 25 v continuous drain current v gs =10v, t c =25 c i d -15 a v gs =10v, t c =100 c -9.5 a pulsed drain current 1 i dm -45 a to...
Description P-Channel Enhancement Mode Power MOSFET

File Size 1,200.94K  /  4 Page

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    Silan Microelectronics
Part No. SA1021
OCR Text ...eimpedance=75 w ;mut e?disabled source?impedance=75 w -- 90 -- mv thermal?resistance from?junction?to?ambient???????????????????????????????...current i 4 v p =3v -- 6.3 -- ma oscillator?current i 5 -- -- 250 -- m a voltage?at?pin?13 v 13-3 --...
Description FM RADIO RECEIVER

File Size 207.97K  /  6 Page

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    Hamamatsu Photonics K.K.
Part No. S7034-1007S S7034-0907S
OCR Text ...utput circuit one-stage mosfet source follower package 24 pin ceramic dip (refer to dimensional outlines) built-in cooler - one-stag...current * 5 (mpp mode) 0 c ds - 200 600 e - /pixel/s readout noise * 6 nr - 30 - e - rm s line bi...
Description CCD area image sensor 防治荒漠化面积图像传感器

File Size 215.41K  /  8 Page

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