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TY Semiconductor Co., L...
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Part No. |
2SC3515
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Description |
High Voltage: VCBO = 300v , VCEO = 300v Low Saturation Voltage: VCE(sat) = 0.5V (max)
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File Size |
849.93K /
4 Page |
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New Jersey Semiconductor
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Part No. |
1N3163 1N3162 1N3174 1N3176 1N3166 1N3167
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Description |
Diode switching 150V 240A 2-Pin DO-9 Diode switching 100V 240A 2-Pin DO-9 Diode switching 1KV 300A 2-Pin DO-9 Diode switching 1.4KV 240A 2-Pin DO-9 Diode switching 300v 240A 2-Pin DO-9 Diode switching 350V 240A 2-Pin DO-9
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File Size |
351.53K /
1 Page |
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it Online |
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SemeLAB SEME-LAB[Seme LAB] Motorola Mobility Holdings, Inc.
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Part No. |
SMLA42CSM
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Description |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300v,Vceo:300v,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300v,Vceo:300v,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装(Vcbo00V,Vceo00V,Vebo6V的)(不适用沟道增强型,高电压功率马鞍山场效应管(Vcbo00V,Vceo00V,Vebo6V的)
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File Size |
16.25K /
2 Page |
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it Online |
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Fairchild Semiconductor Corporation
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Part No. |
FQI22N30
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Description |
TRANSISTOR | MOSFET | N-CHANNEL | 300v V(BR)DSS | 21A I(D) | TO-263 300v N-Channel MOSFET(漏源电压00V的N沟道增强型MOS场效应管)
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File Size |
729.00K /
9 Page |
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it Online |
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Price and Availability
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