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  t431616d e 1m x 16 sdram 512k Datasheet PDF File

For t431616d e 1m x 16 sdram 512k Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643232F-TI60 K4S643232F-TI70

Samsung electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SeMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643232F-TI60 K4S643232F-TI70
Description    2M x 32 sdram 512k x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
-2M x 32 sdram 512k x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
CONNeCTOR ACCeSSORY
2M x 32 sdram 512k x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V

File Size 98.11K  /  12 Page

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    W981616AH W981616AHB1

Winbond electronics
Part No. W981616AH W981616AHB1
Description 512 x 2 Banks x 16 Bits sdram
512k x 2 BANKS x 16 BIT sdram
From old datasheet system

File Size 1,275.25K  /  40 Page

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    CeRAMATe TeCHNOLOGY CO., LTD.
Part No. 50S116T 50S116T-5 50S116T-6 50S116T-7
Description High-speed synchronous dynamic random access memory (sdram), organized as 512k words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (sdram), organized as 512k words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (sdram), organized as 512k words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
sdram(512k x 2 BANKS x 16 BITS sdram)

File Size 1,302.08K  /  42 Page

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    K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC

Samsung Semiconductor Co., Ltd.
SAMSUNG SeMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung electronic
Part No. K4S643232e-TL45 K4S643232e-TL55 K4S643232e-TL70 K4S643232e-TC70 K4S643232e K4S643232e-TC45 K4S643232e-TC50 K4S643232e-TC55 K4S643232e-TC60 K4S643232e-TL50 K4S643232e-TL60 K4S643232e-TC/L/e/N/I/P
Description 2M x 32 sdram 512k x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 sdram 512k x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512k x 32Bit x 4 Banks Synchronous DRAM Data Sheet

File Size 100.95K  /  12 Page

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    K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E

Samsung Semiconductor Co., Ltd.
SAMSUNG SeMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung electronic
Part No. K4S643232e-TN70 K4S643232e-Te50 K4S643232e- K4S643232e-Te60 K4S643232e-Te70 K4S643232e-TN50 K4S643232e-TN60 K4S643232e
Description LeD ORANGe DIFFUSeD 2x5 ReCT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 sdram 512k x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 sdram 512k x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3
LeD ORANGe DIFFUSeD 2x5 ReCT
CONNeCTOR ACCeSSORY
LeD ORG/ReD DIFFUSeD 2x5MM ReCT
-2M x 32 sdram 512k x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

File Size 99.80K  /  12 Page

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    Fujitsu
Part No. MB811643242A
Description 2 x 512k x 32-Bit sdram

File Size 3,564.12K  /  45 Page

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    WED9LAPC3C16V8BC WED9LAPC3C16V8BI

White electronic Designs Corporation
Part No. WeD9LAPC3C16V8BC WeD9LAPC3C16V8BI
Description 512k x 32 SSRAM / 1m x 64 sdram

File Size 573.47K  /  24 Page

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    WED9LAPC2C16V8BC WED9LAPC2C16V8BI

White electronic Designs Corporation
Part No. WeD9LAPC2C16V8BC WeD9LAPC2C16V8BI
Description 512k x 32 SSRAM / 1m x 64 sdram

File Size 807.17K  /  24 Page

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    W9816G6CH W9816G6CH-5 W9816G6CH-6 W9816G6CH-7

Winbond
Part No. W9816G6CH W9816G6CH-5 W9816G6CH-6 W9816G6CH-7
Description 512k × 2 BANKS × 16 BITS sdram

File Size 1,183.79K  /  43 Page

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    W9864G2IB

Winbond
Part No. W9864G2IB
Description 512k × 4 BANKS × 32BITS sdram

File Size 673.51K  /  42 Page

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