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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
QM200HA-24
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| OCR Text |
...rwise noted)
Conditions IC=1A, veb=2V veb=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 200 200 1560 10 2000 -40~+150 -40~+125 Charged part to ca... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
66.40K /
5 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
QM200HA-HK
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| OCR Text |
...rwise noted)
Conditions IC=1A, veb=2V veb=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 200 200 1250 12 2000 -40~+150 -40~+125 Charged part to case,... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
70.59K /
5 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MJF31C MJF32C MJF31C-D
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| OCR Text |
...RATINGS
Rating Symbol VCEO VCB veb IC MJF31C MJF32C 100 100 5.0 3.0 5.0 1.0 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Peak Base Current IB Adc Total Power Dissip... |
| Description |
Complementary Silicon Plastic Power Transistors for Isolated Package Applications
3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
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| File Size |
90.33K /
8 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
2N6488 2N6491 2N6487 2N6490 ON0097
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| OCR Text |
...IIIIIIIIIIIIII
Symbol VCEO VCB veb IC IB PD PD 2N6487 2N6490 60 70 2N6488 2N6491 80 90 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current 5.0 15 5.0 Collector Current -- Continuous T... |
| Description |
15AMPERE COMPLEMENTARY
COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
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| File Size |
150.98K /
6 Page |
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it Online |
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ON Semiconductor
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| Part No. |
2N6517
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| OCR Text |
...IE = 0) Emitter Cutoff Current (veb = 5.0 Vdc, IC = 0) (veb = 4.0 Vdc, IC = 0) ICBO 2N6515 2N6519 2N6517, 2N6520 IEBO 2N6515, 2N6517 2N6519, 2N6520 -- -- 50 50 -- -- -- 50 50 50 nAdc nAdc
ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 ... |
| Description |
TRANSISTOR,BJT,NPN,350V V(BR)CEO,500MA I(C),TO-92
From old datasheet system
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| File Size |
100.94K /
8 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
2N6667 ON0103
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| OCR Text |
...l
TJ, Tstg
VCEO
VCB
veb
PD
PD
IC
IB
Symbol
RJC
RJA
2N6667
60
60
- 65 to + 150
PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60 - 80 VOLTS 65 WATTS
2 0.016
65 0.52
250
10 15
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| Description |
DARLINGTON POWER TRANSISTORS(PNP SILICON )
From old datasheet system
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| File Size |
167.86K /
6 Page |
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it Online |
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New Jersey Semiconductor
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| Part No. |
2N1482/S
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| OCR Text |
... vce o emitter-bas e voltag e veb o co l lecto r curren t 1 c bas e curren t i b powe r dissipatio n p d operatin g an d storag e junctio n temperatur e tj , tst g therma l resistanc e 9j c electrica l characteristic s (t... |
| Description |
Trans GP BJT NPN 55V 1.5A 3-Pin TO-39 Box
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| File Size |
48.08K /
1 Page |
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it Online |
Download Datasheet |
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Price and Availability
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