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  vec Datasheet PDF File

For vec Found Datasheets File :: 1730    Search Time::2.672ms    
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    BUD42D-D BUD42D-1

ON Semiconductor
Part No. BUD42D-D BUD42D-1
OCR Text ...E(sat) VCBO VEBO ICEO IEBO ICES vec hFE Toff Tf Min 650 350 4.6 8.0 10 9.0 - - - - - - - - - - - - - - - - - 0.85 0.35 0.6 0.75 1.3 Typ 780 430 0.9 0.2 2.1 4.7 2.8 3.2 13 12 12 - - - - - - - 6.55 Max 10 200 100 100 200 0.8 1.5 1.0 1.2 - - -...
Description TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 4A I(C) | TO-251AA
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability

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    Mitsubishi Electric
Part No. CM400HB-90H
OCR Text ...elay time tf Turn-off fall time vec(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance Note 1. 2. 3. 4. (N...
Description 2nd-Version HVIGBT Modules

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    Mitsubishi Electric
Part No. CM400DY-34A
OCR Text ...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 400A, VGE = 15V ...
Description HIGH POWER SWITCHING USE

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    Mitsubishi Electric Corporation
Part No. CM800HB-66H
OCR Text ...elay time tf Turn-off fall time vec(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance (Note 4) (Note 1)...
Description High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules

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    Mitsubishi Electric Corporation
Part No. CM1200HB-66H
OCR Text ...elay time tf Turn-off fall time vec(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance (Note 4) (Note 1)...
Description High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules

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    Mitsubishi Electric
Part No. CM800E2C-66H
OCR Text ... Cres QG td (on) tr td (off) tf vec (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collect...
Description 2nd-Version HVIGBT Modules

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    CM50RL-24NF CM50RL-24NF09

Mitsubishi Electric Semiconductor
Part No. CM50RL-24NF CM50RL-24NF09
OCR Text ...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Rev...
Description IGBT MODULES HIGH POWER SWITCHING USE

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    Semikron
Part No. SKM200GA123D SKM200GAL123D SKM200GAR123D
OCR Text ... 5) Eoff Inverse Diode 8) VF = vec IF = 150 A VGE = 0 V; IF = 200 A Tj = 25 (125) C VF = vec Tj = 125 C VTO Tj = 125 C rT IF = 150 A; Tj = 25 (125) C2) IRRM Qrr IF = 150 A; Tj = 25 (125) C2) FWD of types "GAL", "GAR" "123D1"8) 6) VF =...
Description (SKM200GxxxxDx) IGBT Modules

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    CM100DY-28H

POWEREX[Powerex Power Semiconductors]
Part No. CM100DY-28H
OCR Text ...ht (Typical) V Isolation * IE, vec, Trr, Qrr & diE/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). ** Pulse width and repetition rate should be such that the device junction temp. (Tj) does ...
Description Dual IGBTMOD 100 Amperes/1400 Volts

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    CM150DY-28H

Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Part No. CM150DY-28H
OCR Text ...ht (Typical) V Isolation * IE, vec, Trr, Qrr & diE/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). ** Pulse width and repetition rate should be such that the device junction temp. (Tj) does ...
Description Dual IGBTMOD 150 Amperes/1400 Volts

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