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  vf1.1v Datasheet PDF File

For vf1.1v Found Datasheets File :: 97    Search Time::1.281ms    
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    XBS203V17

Torex Semiconductor
Part No. XBS203V17
OCR Text ...ARACTERISTICS PARAMETER SYMBOL VF1 Forward Voltage Reverse Current Inter-Terminal Capacity Reverse Recovery Time *2 *2 Ta=25 LIMITS MIN...1V , f=1MHz IF=IR=10mA , irr=1mA , VF2 VF3 IR Ct trr trr measurement circuit Bias Pulse Genera...
Description Schottky Barrier Diode, 2A, 30V Type

File Size 77.28K  /  3 Page

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    XBS303V17

Torex Semiconductor
Part No. XBS303V17
OCR Text ...ARACTERISTICS PARAMETER SYMBOL VF1 Forward Voltage Reverse Current Inter-Terminal Capacity Reverse Recovery Time *2 *2 Ta=25 LIMITS MIN...1V , f=1MHz IF=IR=10mA , irr=1mA VF2 VF3 IR Ct trr trr measurement circuit Bias Device Under t...
Description Schottky Barrier Diode, 3A, 30V Type

File Size 77.26K  /  3 Page

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    Matsshita / Panasonic
Part No. MA700A MA700
OCR Text ...0 MA2C700A Forward voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr Symbol IR VR = 15 V VR = 30 V IF = 1 mA IF = 30 ...1V 103 1.2 102 0.8 10 25C 0.4 10 1 0 5 10 15 20 25 3...
Description Schottky Barrier Diodes (SBD)

File Size 69.64K  /  3 Page

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    XBS104V14 XBS104V14R

Torex Semiconductor
Part No. XBS104V14 XBS104V14R
OCR Text ...ARACTERISTICS PARAMETER SYMBOL VF1 Forward Voltage Reverse Current Inter-Terminal Capacity Reverse Recovery Time *2 *2 Ta=25 LIMITS MIN...1V , f=1MHz IF=IR=10mA , irr=1mA VF2 VF3 IR Ct trr trr measurement circuit Bias Device Under t...
Description Schottky Barrier Diode, 1A, 40V Type

File Size 69.71K  /  3 Page

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    CXA1211 CXA1211M

SONY[Sony Corporation]
Part No. CXA1211 CXA1211M
OCR Text ...CH1 CH2 G1MAX G2MAX G1MIN G2MIN VF1 VF2 D1CH D2CH N1CH N2CH When only 1ch is A8 used, ch used is set to 2.87V. 2.0 4.5 3.0 4.0 7.5 5.0 6.0 mA 12 7.0 dB 0, 1 3 7 5 Min. gain 500 300 mVp-p kHz 7 1 1 1.8 0, 1 3 7 ...
Description Electronic Volume, This bipolar IC incorporates 2 chnannels.

File Size 116.55K  /  10 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. MA2C700A MA2C700 MA700 MA700A
OCR Text ...0 MA2C700A Forward voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time * Detection efficiency Ct trr Symbol IR VR = 15 V VR = 3...1V 2.0 1.6 103 75C 102 103 1.2 102 0.8 10 25C 10 0.4 1 0 5...
Description From old datasheet system
Schottky Barrier Diodes (SBD)
Silicon epitaxial planar type

File Size 69.07K  /  3 Page

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    Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. MA2C700A MA2C700
OCR Text ...0 MA2C700A Forward voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr Symbol IR VR = 15 V VR = 30 V IF = 1 mA IF = 30 ...1V 103 1.2 102 0.8 10 25C 0.4 10 1 0 5 10 15 20 25 3...
Description Schottky Barrier Diodes (SBD) SILICON, L BAND, MIXER DIODE, DO-34

File Size 47.22K  /  2 Page

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    NTE[NTE Electronics]
Part No. NTE907
OCR Text ...nitude of Diode Offset Voltage |VF1-VF2| (Difference in DC Forward Voltage Drops of any Two Diode Units) Temperature Coefficient of |VF1-VF2| |VF1-VF2| T Temperature Coefficient of Forward VF T Drop DC Forward Voltage Drop for VF Anode-to-S...
Description Integrated Circuit Diode Array

File Size 26.42K  /  3 Page

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    CA303900 CA3039M96 CA3039 CA3039M

INTERSIL[Intersil Corporation]
Part No. CA303900 CA3039M96 CA3039 CA3039M
OCR Text ... 1) Temperature Coefficient of |VF1 - VF2| (Figure 4) V(BR)R V(BR)R IR IR VF1 - VF2 IR = -10A IR = -10A VR = -4V VR = -10V IF = 1mA IF = 1mA - 0.016 0.022 100 100 nA nA - 0.5 5.0 mV V/oC V F1 - V F2 -------...
Description Diode Array

File Size 44.47K  /  4 Page

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