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				Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
Part No.	AT93C46B AT93C46B-10PC AT93C46B-10PC-2.5 AT93C46B-10PC-2.7 AT93C46B-10PI AT93C46B-10PI-2.5 AT93C46B-10PI-2.7 AT93C46B-10SC AT93C46B-10SC-2.5 AT93C46B-10SC-2.7 AT93C46B-10SI AT93C46B-10SI-2.5 AT93C46B-10SI-2.7
OCR Text	x16 Organization Utilizing "No Connects" for Pins 6 and 7 * Low Voltage and Standard Voltage Operation - 5.0 (VCC = 4.5V to 5.5V) - 2.7 (VCC = 2.7V to 5.5V) - 2.5 (VCC = 2.5V to 5.5V) 3-Wire Serial Interface 2 MHz Clock Rate (5V) Compatibi...
Description	3-Wire Serial E2PROMs 3线串行E2PROMs
File Size	142.88K / 10 Page	View it Online	Download Datasheet

				MAXIM INTEGRATED PRODUCTS INC MAXIM - Dallas Semiconductor DALLAS[Dallas Semiconductor] DALLAS[Dallas Semiconducotr] Maxim Integrated Products, Inc.
Part No.	DS2502-E48 DS2502P-E48 DS2502P-E48_TR DS2502P-E48/R DS2502P-E48/T DS2502P-E48/TR
OCR Text	...dized CRC16 polynomial function X16 + X15 + X2 + 1. For more details on generating CRC values including examples in both hardware and software, see Application Note 27. The contents of the memory address range 0DH to 1FH is FFH. These cells...
Description	48浣???瑰??????\|}48-Bit Node Address Chip 48位节点地址芯片 1K X 1 OTPROM, PBCY3 1Kb Add-Only Memory 1K X 1 OTPROM, PDSO6
File Size	140.83K / 2 Page	View it Online	Download Datasheet

				ISSI[Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc]
Part No.	IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S16800A-7T IS42S16800A-7TI IS42S16800A-7TL IS42S16800A-7TLI IS42S32400A IS42S32400A-10T IS42S32400A-10TI IS42S32400A-10TL IS42S32400A-10TLI IS42S32400A-6T IS42S32400A-6TL IS42S32400A-7T IS42S32400A-7TI IS42S32400A-7TL IS42S32400A-7TLI IS42S81600A IS42S81600A-10T IS42S81600A-10TI IS42S81600A-10TL IS42S81600A-6T IS42S81600A-6TL IS42S81600A-7T IS42S81600A-7TI IS42S81600A-7TL IS42S81600A-7TLI 42S16800A
OCR Text	x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES * Clock frequency: 166,143,100 MHz * Fully synchronous; all signals referenced to a positive clock edge * Internal bank for hiding row access/precharge * Power supply IS42S81600A IS42S168...
Description	16Meg x 8 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
File Size	534.78K / 61 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text	...C-Y,P K9F5616U0C-D,H 2.7 ~ 3.6V X16 X8 2.4 ~ 2.9V X16 Vcc Range 1.70 ~ 1.95V Organization X8 X16 X8 TSOP1 TBGA TSOP1 TBGA TSOP1 TBGA WSOP1 TSOP1 TBGA PKG Type TBGA FEATURES * Voltage Supply - 1.8V device(K9F56XXQ0C) : 1.70~1.95V - 2.65V...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	679.73K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text	...al issue. At Read2 operation in X16 device : A3 ~ A7 are Don' care ==> A3 ~ A7 are "L" t 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA 2. AC parameter is changed. tRP(min.) : 30ns --> 25ns 3. WP pin ...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	601.33K / 34 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text	...C-Y,P K9F5616U0C-D,H 2.7 ~ 3.6V X16 X8 Vcc Range 1.70 ~ 1.95V Organization X8 X16 TSOP1 TBGA WSOP1 TSOP1 TBGA PKG Type TBGA FEATURES * Voltage Supply - 1.8V device(K9F56XXQ0C) : 1.70~1.95V - 3.3V device(K9F56XXU0C) : 2.7 ~ 3.6 V * Organ...
Description	32M x 8 Bit NAND Flash Memory 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata
File Size	653.97K / 39 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	M29W640DB M29W640DB70N1E M29W640DB70N1F M29W640DB70N1T M29W640DB70N6E M29W640DB70N6F M29W640DB70N6T M29W640DB70ZA1E M29W640DB70ZA1F M29W640DB70ZA1T M29W640DB70ZA6E M29W640DB70ZA6F M29W640DB70ZA6T M29W640DB90N1E M29W640DB90N1F M29W640DB90N1T M29W640DB90N6E M29W640DB90N6F M29W640DB90N6T M29W640DB90ZA1E M29W640DB90ZA1F M29W640DB90ZA1T M29W640DB90ZA6E M29W640DB90ZA6F M29W640DB90ZA6T M29W640DT M29W640DT70N1E M29W640DT70N1F M29W640DT70N1T M29W640DT70N6E M29W640DT70N6F M29W640DT70N6T M29W640DT70ZA1E M29W640DT70ZA1F M29W640DT70ZA1T M29W640DT70ZA6E M29W640DT70ZA6F M29W640DT70ZA6T M29W640DT90N1E M29W640DT90N1F M29W640DT90N1T M29W640DT90N6E M29W640DT90N6F M29W640DT90N6T M29W640DT90ZA1E M29W640DT90ZA1F M29W640DT90ZA1T M29W640DT90ZA6E M29W640DT90ZA6F M29W640DT90ZA6T
OCR Text	x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE - VCC = 2.7V to 3.6V for Program, Erase, Read - VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRA...
Description	64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
File Size	381.58K / 50 Page	View it Online	Download Datasheet

				ST Microelectronics 意法半导 STMicroelectronics
Part No.	M29W640D M29DW323
OCR Text	...Device Function 640D= 64Mb (x8/x16), Boot Block 8+24+24+8 partitioning 70 = 70ns 90 = 90ns Package N = TSOP48, 12x20mm ZA = TFBGA63, 7x11mm, 0.80mm pitch M29 D W 640D 70 N 1 T Architecture D = Dual Operations ...
Description	Excalibur High-Speed Low-Power Precision Quad Operational Amplifier 16-SOIC FLASH NOR HIGH DENSITY & CONSUMER
File Size	1,807.30K / 15 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPD45128163 UPD45128163G5-A10 UPD45128163G5-A10-9JF UPD45128163G5-A10B UPD45128163G5-A10B-9JF UPD45128163G5-A75 UPD45128163G5-A75-9JF UPD45128163G5-A80 UPD45128163G5-A80-9JF UPD45128441 UPD45128441G5-A10 UPD45128441G5-A10-9JF UPD45128441G5-A10B UPD45128441G5-A10B-9JF UPD45128441G5-A75 UPD45128441G5-A75-9JF UPD45128441G5-A80 UPD45128441G5-A80-9JF UPD45128841 UPD45128841G5-A10 UPD45128841G5-A10-9JF UPD45128841G5-A10B UPD45128841G5-A10B-9JF UPD45128841G5-A75 UPD45128841G5-A75-9JF UPD45128841G5-A80 UPD45128841G5-A80-9JF
OCR Text	...3) and BA1(A12) * Byte control (x16) by LDQM and UDQM * Programmable Wrap sequence (Sequential / Interleave) * Programmable burst length (1, 2, 4, 8 and full page) * Programmable /CAS latency (2 and 3) * Automatic precharge and controlled p...
Description	128M-bit Synchronous DRAM 4-bank, LVTTL
File Size	1,081.23K / 92 Page	View it Online	Download Datasheet

				VITESSE[Vitesse Semiconductor Corporation] ETC
Part No.	VSC6048
OCR Text	...T PLL Clock Multiplier Unit x8, x16 400MHz Clock Calibration Register 6 CAL_DAT 800MHz Clock G52335-0, Rev. 4.0 8/28/00 (c) VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano, Camarillo, CA 93012 * 805/388-3700 * FAX: 805/987-589...
Description	High-Speed Octal Programmable Timing Generator
File Size	204.26K / 18 Page	View it Online	Download Datasheet

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