100-160v pdf Datasheet P3 Full Text Search --- IC-ON-LINE


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100-160v Datasheet PDF File

For 100-160v Found Datasheets File :: 2066 Search Time::1.094ms
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				International Rectifier, Corp.
Part No.	JANSH2N7269U
OCR Text	...e-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 170 v g...160v, v gs =0v r ds(on) static drain-to-source ? ? 0.100 ? 0.155 ? ...
Description	200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 200000kRad高可靠性单个N -沟道工贸硬化的贴片MOSFET 1封装
File Size	278.93K / 12 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	STTH602C-Y STTH602CBY-TR
OCR Text	...ry time i f = 1 a, di f /dt = -100 a/s, v r = 30 v, t j = 25 c 14 20 ns i f = 1 a, di f /dt = -50 a/s, v r = 30 v, t j = 25 c 21 30 i ...160v t j =125c t j =25c di f /dt(a/s) figure 7. reverse recovery time versus di f /dt (typical valu...
Description	Automotive ultrafast recovery diode
File Size	79.02K / 7 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STTH802-Y
OCR Text	...urrent t p = 10 ms sinusoidal 100 a t stg storage temperature range -65 to + 175 c t j operating junction temperature range -40 to + 175 ...160v t j =125c t j =25c di f /dt(a/s) characteristics stth802-y 4/7 doc id 018563 rev 2 ...
Description	Automotive ultrafast recovery diode
File Size	85.13K / 7 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	2SD2449
OCR Text	...rent v cb = 160v; i e = 0 100 a i ceo collector cutoff current v ce = 160v; i b = 0 100 a i ebo emitter cutoff current v eb = 5v; i c = 0 100 a h fe-1 dc current gain i c = 8a; v ce = 5v 3000 20000 h fe-2 dc...
Description	isc Silicon NPN Darlington Power Transistor
File Size	80.84K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF640N IRF640NL IRF640NS
OCR Text	...VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 67 ID = 11A 11 nC VDS = 160V 33 VGS = 10V, See Fig. 6 and 13 --- VDD = 100V --- ID = 11A ns --- RG = 2.5 --- RD = 9.0, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from...
Description	Power MOSFET(Vdss=200V/ Rds(on)=0.15ohm/ Id=18A) Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)
File Size	153.14K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFBA90N20 IRFBA90N20D
OCR Text	...VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge...
Description	Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?? Power MOSFET(Vdss=200V/ Rds(on)max=0.023ohm/ Id=98A) Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A) Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?) Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?
File Size	97.19K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRFR13N20DTRR
OCR Text	...-source forward leakage CCC CCC 100 v gs = 30v gate-to-source reverse leakage CCC CCC -100 na v gs = -30v i gss i dss drain-to-source leak...160v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain volta g e (v) i , rev...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 13A I(D) \| TO-252AA 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\|3A条（丁）\|52AA
File Size	210.30K / 10 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOTF450L
OCR Text	...i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.6 4.2 4.5 v r ds(on) 0.57 0.7 w g fs 3.4 s v sd 0.78 1 v i s maxim...160v, i d =5.8a gate source charge turn-on rise time gate drain charge maximum body-diode pulsed cur...
Description	200V, 5.8A N-Channel MOSFET
File Size	503.16K / 5 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR15N20D IRFU15N20D
OCR Text	...VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge...
Description	SMPS MOSFET
File Size	180.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230
OCR Text	...- -- 4.0 -- -- 0.2 4.0 -- 10 25 100 -100 50 7.4 20 25 100 35 30 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 1.0mA Reference to 2...160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 13A VDS = 100V VDD ...
Description	200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
File Size	123.99K / 8 Page	View it Online	Download Datasheet

For 100-160v Found Datasheets File :: 2066 Search Time::1.094ms
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