250x 032 94v-0 fem fiqd cont pdf Datasheet P3 Description --- IC-ON-LINE


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250x 032 94v-0 fem fiqd cont Datasheet PDF File

For 250x 032 94v-0 fem fiqd cont Found Datasheets File :: 150+ Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Molex, Inc. MOLEX INC
Part No.	19019-0052 19019-0037 19019-0057 19019-0049 19019-0054 19019-0030 19019-0035 19019-0027 19019-0038
Description	.250x.032 fem.QD AVIKRIMP (P-8142) 4.2 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL CONN .250 femALE INSUL 10-12AWG 6 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL .250x.032 fem.QD AVIK./REEL (PZ-8142) 4.2 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL .187X.032 fem.QD AVIKRIMP (P-8139-032) 4.2 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL 190190054 4.2 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL .187X.020 fem.QD AVIK. TAPED (BB-8138T) 2.5 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL .205 X .032 fem.QD AVIKRIMP (BB-8191-032 2.5 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL CONN .187 femALE INSUL 14-16AWG 2.5 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL .250x.032 fem.QD AVIK. TAPED (C-8143T)
File Size	228.04K / 2 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRFN340SMD
Description	N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
File Size	23.56K / 2 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB]
Part No.	IRFY430M-T257
Description	Publications, Books RoHS Compliant: NA N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)) N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
File Size	19.79K / 2 Page	View it Online	Download Datasheet

				SemeLAB Seme LAB International Rectifier http://
Part No.	IRF054SMD
Description	N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET（减振钢板基本：60V的，身份证（续）5A条，的Rds（on）：0.027Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本0V的，身份证（续）5A条，的Rds（on.027Ω））
File Size	22.26K / 2 Page	View it Online	Download Datasheet

				TT electronics Semelab, Ltd. International Rectifier, Corp. Seme LAB
Part No.	IRFN140SMD
Description	ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
File Size	22.23K / 2 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. TT electronics Semelab Limited Seme LAB
Part No.	IRFE230 2N6798U
Description	N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω）） N-Channel N沟道
File Size	16.94K / 2 Page	View it Online	Download Datasheet

				Seme LAB
Part No.	IRFE9130
Description	P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
File Size	16.50K / 2 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	IRF9130SMD
Description	P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	20.44K / 2 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	IRF9530S IRF9530SMD
Description	P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	22.38K / 2 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	SML100W18
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
File Size	25.75K / 2 Page	View it Online	Download Datasheet

For 250x 032 94v-0 fem fiqd cont Found Datasheets File :: 150+ Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |