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FUJI[Fuji Electric]
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| Part No. |
2MBI200U4B-120
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| OCR Text |
09 '05 Feb. 09 '05
S.Miyashita T.Miyasaka
Y.Seki
K.Yamada
MS5F6032
1
13
H04-004-07b
Revised
Date Classification Ind...2001 edition)
Mechanical Tests
Test Method 401 Method Test Method 402 method Test Method 403 R... |
| Description |
IGBT MODULE
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| File Size |
417.97K /
13 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
20L15TPBF
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| OCR Text |
09/04
20L15TPbF
SCHOTTKY RECTIFIER 20 Amps
IF(AV) = 20Amp VR = 15V
Major Ratings and Characteristics Characteristics
IF(AV) Rectang...2001 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY LOT CODE P = LEAD-FREE... |
| Description |
SCHOTTKY RECTIFIER
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| File Size |
104.88K /
6 Page |
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it Online |
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TOSHIBA
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| Part No. |
5DLZ47A
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| OCR Text |
09 1 toshiba high efficiency rectifier silicon epitaxial type 5dlz47a switching mode power supply application converter & chopper ...2001-07-09 2 electrical characteristics (ta = 25c) characteristic symbol test condition min max ... |
| Description |
HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
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| File Size |
135.60K /
4 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BAR67-03W
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| OCR Text |
... Thermal Resistance
1
Jul-09-2001
BAR67-03W
Electrical Characteristics at TA = 25 C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Breakdown voltage I(BR) = 5 A Reverse current VR = 100 V Forward vol... |
| Description |
Silicon PIN Diode
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| File Size |
25.70K /
3 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BFP193W
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| OCR Text |
...
RthJS
145
K/W
Aug-09-2001
BFP193W
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VC... |
| Description |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers NPN Silicon RF Transistor
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| File Size |
74.15K /
7 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BFR181T
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| OCR Text |
... 150
405
K/W
1
Aug-09-2001
BFR181T
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VC... |
| Description |
NPN Silicon RF Transistor
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| File Size |
69.24K /
7 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BFR182W
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| OCR Text |
...C 1)
240
K/W
1
Aug-09-2001
BFR182W
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VC... |
| Description |
NPN Silicon RF Transistor
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| File Size |
77.82K /
7 Page |
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it Online |
Download Datasheet
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Price and Availability
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