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1.8v 1.6v Datasheet PDF File

For 1.8v 1.6v Found Datasheets File :: 28509 Search Time::2.094ms
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				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	GTLP36T612 GTLP36T612G GTLP36T612GX
OCR Text	...s than 0.5V, the output HIGH is 1.5V and the receiver threshold is 1.0V. Features s Bidirectional interface between GTLP and LVTTL logic...8V VI = 2.0V VO = 3.45 VO = 3.45V VO = 0V VO = 0V Outputs HIGH Outputs LOW Outputs Disabled VCC, VCC...
Description	36-Bit LVTTL/GTLP Universal Bus Transceiver
File Size	77.84K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	GTLP8T306 GTLP8T306MTC
OCR Text	... 0.5V, the output HIGH level is 1.5V and the receiver threshold is 1.0V. Features s Bidirectional interface between GTL/GTLP and LVTTL l...8V VI = 2.0V VO = 3.45V VO = 1.5V VO = 0 VO = 0.55 Outputs HIGH Outputs LOW Outputs Disabled One Inp...
Description	8-Bit LVTTL/GTLP Bus Transceiver(8LVTTL/GTLP电平转换总线驱动 8LVTTL / GTLP总线收发器（8LVTTL / GTLP电平转换总线驱动器）
File Size	57.87K / 7 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY62WT08081E HY62WT08081E-DGC HY62WT08081E-DGE HY62WT08081E-DGI HY62WT08081E-DPC HY62WT08081E-DPE HY62WT08081E-DPI HY62WT08081E-DTC HY62WT08081E-DTE HY62WT08081E-DTI HY62WT0808 HY62WT08081E-DG70C
OCR Text	... 55/70 10 2.7~3.6 70/85 2 Note 1. Current value is max. 70ns is available with 30pF test load Product No. HY62WT08081E-C PIN CONNEC...8V to 2.4V Vcc = 2.7~3.6V 0.4V to 2.2V Input Rise and Fall Time 5ns Input and Output Timing Referenc...
Description	HY62WT08081E Series 32Kx8bit CMOS SRAM HY62WT08081E系列32Kx8bit CMOS SRAM
File Size	202.96K / 13 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	ICM7213 ICM7213IPD FN3165
OCR Text	...024Hz, 34.133Hz, 16Hz, 1Hz, and 1/60Hz (plus composites). The ICM7213 utilizes a very high speed low power metal gate CMOS technology which ...8V V 12V (10 NOMINAL) I1 100A I2 1mA R2 3k R2 R1 6.8k I2 VSS CBYPASS 0.01F I1 VDD ICM 7213 ...
Description	From old datasheet system One Second/One Minute Timebase Generator
File Size	47.30K / 6 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...GE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handli...8V 80s PULSE TEST 12 VGS = 7V 9 6 VGS = 6V 3 VGS = 4V 0 0 25 50 75 100 VDS, DRAIN TO SOU...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...leaded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab drain 123 gate source drain LIMI...8V 6V Normalised Current Derating, ID (%) 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 Mou...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	...GE) SOURCE (PIN 2) GATE (PIN 1) 5-20 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pr...8V VGS = 7V 100s 10 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED SINGLE ...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	... Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Volta...8V 1ms OPERATION IN THIS AREA IS LIMITED BY rDS(ON) -6 PULSE DURATION = 80s DUTY CYCLE = 0.5% ...
Description	6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	IRF9540 RF1S9540SM FN2282
OCR Text	...SM -100 -100 -19 -12 -76 20 150 1 960 -55 to 175 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . ....8V -20 VGS = -5V 0 0 -10 -20 VGS = -7V VGS = -6V -30 VGS = -4V -40 -50 1 VDS, DRAIN TO SOURCE ...
Description	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs From old datasheet system
File Size	59.17K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9620 FN2283
OCR Text	1.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET de...8V VGS = -9V VGS = -7V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) -4 PULSE DURATION = 8...
Description	3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET 3.5A 200V 1.500 Ohm P-Channel Power MOSFET From old datasheet system
File Size	57.96K / 7 Page	View it Online	Download Datasheet

For 1.8v 1.6v Found Datasheets File :: 28509 Search Time::2.094ms
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